Polysiloxanes and materials based on them (silicone materials) are of great interest in
optoelectronics due to their high flexibility, good film-forming ability, and optical …

Semiconductor nanowires exhibit numerous capabilities to advance the development of
future optoelectronic devices. Among the III–V material family, gallium phosphide (GaP) is …

Growth and properties of the self‐catalyzed heterostructured GaP nanowires (NWs) with
GaP1− xAsx insertions in the form of nanodiscs (NDs) grown by means of molecular‐beam …

The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a
promising platform for the development of optoelectronic devices. Nanowires, due to their …

The architecture of transparent contacts is of utmost importance for creation of efficient
flexible light-emitting devices (LEDs) and other deformable electronic devices. We …

Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables
new approaches with respect to designing photonic and electronic devices at the nanoscale …

Nanoparticles (NPs) with different geometry have been extensively investigated for several
decades owing to their unique optical properties which provide efficient focusing …

In this work we investigate effects of the crystal phase, twinning defects and shell formation
on the work function distribution over the surface of axially heterostructured GaP/GaPAs/GaP …

We present an original approach to realistic modeling of light focusing by microsphere
systems to form the photonic jets for nano-patterning of the substrates with high refractive …

Zinc oxide based nanostructures are synthesized on polycore sensor platform with
interdigitated contacts by sol-gel and low-temperature hydrothermal method allowing for …