GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …

We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron
mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the …

We present an accurate and robust surface-potential-based compact model for simulation of
circuits designed with GaN-based high-electron mobility transistors (GaN HEMTs). An …

In this work, the gate degradation of GaN-based HEMTs is analyzed. We find that the gate
degradation does not occur only beyond a critical voltage, but it has a strong voltage …

In this paper, we review and add additional data and understandings on our findings on the
two most common failure modes of GaN-based HEMTs: 1) permanent gate leakage current …

Coupled electro-thermo-mechanical simulation and Raman thermometry were utilized to
analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors …

AlGaN/GaN high electron mobility transistors are gaining commercial acceptance for use in
high power and high frequency applications, but the degradation mechanisms that drive …

In this work we report on the two most common failure modes for AlGaN/GaN-based HEMTs:
the gate leakage increase and the output current drop. First, by performing step-stress …

Monte Carlo analysis of hot-electron degradation in AlGaN/GaN high-electron mobility
transistors shows that, for gate voltages corresponding to semi-ON bias conditions, the …

This paper reports on an extensive investigation of the gate stability of GaN-based High
Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on …