A survey of Gallium Nitride HEMT for RF and high power applications
ASA Fletcher, D Nirmal - Superlattices and Microstructures, 2017 - Elsevier
This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …
suitable for RF and high power applications. It plays a vital role in Wireless communication …
Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate,
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
Analysis of the gate capacitance–voltage characteristics in p-GaN/AlGaN/GaN heterostructures
TL Wu, B Bakeroot, H Liang… - IEEE Electron …, 2017 - ieeexplore.ieee.org
In this letter, we analyzed the gate capacitance characteristics in p-GaN gate/AlGaN/GaN
heterostructures by using a two-junction capacitor model. First, we have observed that the …
heterostructures by using a two-junction capacitor model. First, we have observed that the …
AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer
K Geng, D Chen, Q Zhou, H Wang - Electronics, 2018 - mdpi.com
Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and
passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility …
passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility …
Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor
A low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-
electron-mobility transistor (DC-MOS-HEMT) is proposed and demonstrated in this letter …
electron-mobility transistor (DC-MOS-HEMT) is proposed and demonstrated in this letter …
Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric
X Lu, K Yu, H Jiang, A Zhang… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Interface trapping is one of the most notorious effects that limit device performance in GaN-
based MIS high electron mobility transistors (MISHEMTs). In this paper, we present a …
based MIS high electron mobility transistors (MISHEMTs). In this paper, we present a …
The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors
JL Zhang, P Ding, B Mei, SH Meng, C Zhang… - Applied Physics …, 2022 - pubs.aip.org
InP-based high electron mobility transistors (HEMTs) are potential candidates for sub-
millimeter wave and terahertz satellite communications due to their ultrahigh frequency …
millimeter wave and terahertz satellite communications due to their ultrahigh frequency …
Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer
S Gao, Q Zhou, X Liu, H Wang - IEEE Electron Device Letters, 2019 - ieeexplore.ieee.org
We propose two kinds of stacked materials that effectively yield low drain off-state leakage
current, high off-state breakdown voltage and low current collapse simultaneously in …
current, high off-state breakdown voltage and low current collapse simultaneously in …
Degradation behavior and mechanisms of E-mode GaN HEMTs with p-GaN gate under reverse electrostatic discharge stress
YQ Chen, JT Feng, JL Wang, XB Xu… - … on Electron Devices, 2020 - ieeexplore.ieee.org
The degradation behavior and its mechanisms of E-mode GaN high electron mobility
transistors (HEMTs) with p-GaN gate under electrostatic discharge (ESD) stress were …
transistors (HEMTs) with p-GaN gate under electrostatic discharge (ESD) stress were …