In this letter, fluorine-implanted termination (FIT) has been demonstrated in vertical GaN-on-
GaN Schottky barrier diodes (SBDs). Owing to the unique feature of F ions that can become …

Wide band gap III-nitride materials have gained considerable attention as promising
semiconductor materials for light-emitting photonic diodes and high-frequency/power …

GaN high electron mobility transistors (HEMTs) represent an emerging and key enabling
technology for obtaining highly efficient and compact power electronic systems. The use of …

In this letter, we report a high performance GaN quasi-vertical Schottky barrier diode (SBD)
on sapphire substrate with a planar anode selective fluorine treatment (SFT). The presented …

Physics-based compact models have well-known advantages over empirical modeling
approaches, such as consistent and physical behavior of the model for different types of …

Vertical Schottky barrier diodes (SBD) were fabricated on 1a 5 μm thick GaN drift layer (DL)
with and without Mg-compensation grown by metal organic chemical vapour deposition on …

The emergence of free-standing GaN substrates enables the development of vertical GaN-
on-GaN devices with high-power ratings and high frequencies. The Schottky interface plays …

This paper presents a frequency dependent reliability study of commercially available GaN
HEMTs. Both circuit and device-level experiments were performed to better understand the …

Abstract Current-voltage-temperature characteristics (0 C to 150 C) of SBDs on highly
compensated 15 μm and 30 μm n-type GaN drift layer were measured for voltages up to …

Представлена широкополосная модель диода, разработанная на основе диодов с
барьером Шоттки, выполненных по технологии монолитных интегральных схем на …