Wireless power transfer (WPT) for portable electronic applications has been gaining a lot of
interest over the past few decades. This study provides a comprehensive review of the …

This work demonstrates a novel junction termination extension (JTE) with a graded charge
profile for vertical GaN pn diodes. The fabrication of this JTE obviates GaN etch and requires …

Edge termination is the key building block in power devices to enable near-ideal, avalanche
breakdown voltage (BV). This work presents the design, fabrication, and physics of a GaN …

This work examines a new hybrid edge termination structure for vertical GaN diodes. The
hybrid JTE-GR termination consists of superimposed guard rings (GRs) onto a junction …

To improve the manufacturing process of GaN wafers, inexpensive wafer screening
techniques are required to both provide feedback to the manufacturing process and prevent …

This study presents empirical validation of a simulated novel hybrid edge termination (HET)
structure with planar ion implantation processing for vertical gallium nitride (GaN) diodes …

Semiconductor wafer manufacturing relies on the precise control of various performance
metrics to ensure the quality and reliability of integrated circuits. In particular, GaN has …

Selective area doping via ion implantation is crucial to the implementation of most modern
devices and the provision of reasonable device design latitude for optimization. Herein, we …

Wireless power transfer (WPT) for portable electronic applications has been gaining a lot of
interest over the past few decades. This study provides a comprehensive review of the …

Achieving high-performance fully-vertical GaN devices on low-cost and large-scale foreign
substrates are highly attractive for the development of device technology. In this work, by …