Assessing, controlling and understanding parameter variations of SiC power MOSFETs in switching operation
T Aichinger, MW Feil, P Salmen - Key Engineering Materials, 2023 - Trans Tech Publ
Semiconductor manufacturers and researchers have recently revealed that under specific
bipolar gate switching conditions SiC MOSFETs exhibit parameter drift dynamics different …
bipolar gate switching conditions SiC MOSFETs exhibit parameter drift dynamics different …
Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps
Switching a silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor between
inversion and accumulation with removed drain and grounded source terminals leads to …
inversion and accumulation with removed drain and grounded source terminals leads to …
Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs
Fully processed SiC power MOSFETs emit light during switching of the gate terminal, while
the drain and source terminals are both grounded. The emitted photons are caused by …
the drain and source terminals are both grounded. The emitted photons are caused by …