Design and investigation of InAs source dual metal stacked gate-oxide heterostructure tunnel FET based label-free biosensor
R Ghosh, RP Nelapati - Micro and Nanostructures, 2023 - Elsevier
In this paper, a stacked gate oxide (high-k/low-k) approach towards the design of a Dual
Metal Stacked Gate oxide Heterostructure Tunnel Field Effect Transistor (DM SGox HTFET) …
Metal Stacked Gate oxide Heterostructure Tunnel Field Effect Transistor (DM SGox HTFET) …
Comprehensive review on charge plasma based junction less TFET biosensor
M Jaya, R Lorenzo - Microsystem Technologies, 2024 - Springer
Now a days there is a dramatic increase in interest in next-generation biosensors for use in
point-of-care (PoCT) devices. A potentiometric device is designed using semiconducting …
point-of-care (PoCT) devices. A potentiometric device is designed using semiconducting …
A dielectric modulated step-channel junction-less TFET (DM-SC-JLTFET) for label-free detection of breast cancer cells: design and sensitivity analysis
J Bitra, G Komanapalli - Sensing and Imaging, 2023 - Springer
This work designs a novel dielectric modulated step channel Junctionless tunnel field effect
(DM-SC-JLTFET) for the label-free detection of breast cancer cells using their dielectric …
(DM-SC-JLTFET) for the label-free detection of breast cancer cells using their dielectric …
Low-bandgap Material Engineering based TFET device for Next-Generation Biosensor Application-A Comprehensive review on Device structure and Sensitivity.
Abstract The Tunnel Field Effect Transistor (TFET) device has emerged as the potential
candidate to replace the Field Effect Transistor (FET)--based biosensor for the label-free …
candidate to replace the Field Effect Transistor (FET)--based biosensor for the label-free …
Sensitivity analysis of Horizontal pocket N-TFET based biosensor considering repulsive steric effects
In this paper, sensitivity analysis of Tunnel Field Effect Transistor (TFET) based label free
Biosensor has been countered considering the repulsive steric effect (RSE). Horizontal …
Biosensor has been countered considering the repulsive steric effect (RSE). Horizontal …
Sensitivity Analysis of Dielectrically Modulated Hetero junction InSb/Si SOI-TFET based Biosensor for Cancer Detection.
NN Reddy, VSP Reddy, PBS Jyothi… - 2023 3rd …, 2023 - ieeexplore.ieee.org
Cancer is a major killer worldwide. Cancer death rates can be managed with early
diagnosis. This study suggests an SOI TFET with a dielectric controlled dual material gate for …
diagnosis. This study suggests an SOI TFET with a dielectric controlled dual material gate for …
An Improved Z-Shaped Dual-Material-Gate DM-SDZ-TFET Biosensor for Label-Free Detection
J Bitra, G Komanapalli - Journal of Electronic Materials, 2024 - Springer
In this paper, the sensitivity of a dielectric-modulated split-drain Z-shaped gate tunnel field-
effect transistor (DM-SDZ-TFET) is investigated for label-free detection of biomolecules …
effect transistor (DM-SDZ-TFET) is investigated for label-free detection of biomolecules …
Sensitivity analysis of bi-metal stacked-gate-oxide hetero-juncture tunnel fet with Si0.6Ge0.4 source biosensor considering non-ideal factors
R Ghosh, RP Nelapati, P Saha, R Chinthaginjala… - Plos one, 2024 - journals.plos.org
This article provides insights in designing a dielectrically modulated biosensor by adopting
high-k stacked gate oxide proposition in a bi-metal hetero-juncture Tunnel Field Effect …
high-k stacked gate oxide proposition in a bi-metal hetero-juncture Tunnel Field Effect …
Numerical modelling for triple hybrid gate optimization dielectric modulated junctionless gate all around SiNWFET based uricase and ChOX biosensor
In this manuscript, a numerical model based on the electric field, threshold voltage, sub-
threshold current, and electrostatic potential in cylindrical coordinates using Poisson's …
threshold current, and electrostatic potential in cylindrical coordinates using Poisson's …
GSE and GWE Techniques to improve ON (ION) current and Ambipolar conduction of Tunnel FET (TFET) device: A Comprehensive review.
Due to its versatility, metal oxide semiconductor field effect transistor (MOSFET) based
devices are seeing tremendous growth in demand. To meet the demands of high speed and …
devices are seeing tremendous growth in demand. To meet the demands of high speed and …