Comparative study of oxygen-and carbon-related defects in electron irradiated cz–Si doped with isovalent impurities
CA Londos, A Chroneos, EN Sgourou, I Panagiotidis… - Applied Sciences, 2022 - mdpi.com
Crystalline silicon (Si) is the key material of the semiconductor industry, with significant
applications for electronic and microelectronic devices. The properties of Si are affected by …
applications for electronic and microelectronic devices. The properties of Si are affected by …
Statistical Studies on Random Configurations of Silicon Germanium Carbon Alloys Using Density Functional Theory
F Fuchs, W Roscher, D Dick, CF Irmscher… - The Journal of …, 2025 - ACS Publications
SiGeC, a random alloy, is studied by means of density functional theory for different Si: Ge
ratios across the whole composition range and small C concentrations of 1.6 and 3.2% in Si …
ratios across the whole composition range and small C concentrations of 1.6 and 3.2% in Si …
The CsCs and CsCsV Defects in Silicon: Density Functional Theory Calculations
N Kuganathan, EN Sgourou, A Chroneos, CA Londos - Silicon, 2024 - Springer
Carbon-related defects in silicon (Si) are commonly introduced during crystal growth via the
Czochralski method and processing. They can play an important role in affecting the …
Czochralski method and processing. They can play an important role in affecting the …
[HTML][HTML] Isovalent dopant-vacancy clusters in silicon: Density functional theory calculations
N Kuganathan, EN Sgourou, A Chroneos… - Physica B: Condensed …, 2024 - Elsevier
Isovalent dopants (D) incorporated in the silicon (Si) lattice can readily associate with
vacancies to form dopant-vacancy pairs. Theoretical and experimental studies have shown …
vacancies to form dopant-vacancy pairs. Theoretical and experimental studies have shown …
Interstitial carbon defects in silicon. A quantum mechanical characterization through the infrared and Raman spectra
Abstract The Infrared (IR) and Raman spectra of various interstitial carbon defects in silicon
are computed at the quantum mechanical level by using an all electron Gaussian type basis …
are computed at the quantum mechanical level by using an all electron Gaussian type basis …
Oxygen and vacancy defects in silicon. A quantum mechanical characterization through the IR and Raman spectra
The Infrared (IR) and Raman spectra of various defects in silicon, containing both oxygen
atoms (in the interstitial position, O i) and a vacancy, are computed at the quantum …
atoms (in the interstitial position, O i) and a vacancy, are computed at the quantum …
Remarkable Prospect for Quantum-Dot-Coupled Tin Qubits in Silicon
WM Witzel, JJ Lutz, DR Luhman - PRX Quantum, 2022 - APS
Spin-1 2 119 Sn nuclei in a silicon semiconductor could make excellent qubits. Nuclear
spins in silicon are known to have long coherence times. Tin is isoelectronic with silicon, so …
spins in silicon are known to have long coherence times. Tin is isoelectronic with silicon, so …
Microscopic Characterization of Oxygen Defects in Diamond as Models for N3 and OK1 Defects: A Comparison of Calculated and Experimental Electron …
The local structure and composition of the diamond paramagnetic defects labelled N3 and
OK1 in which two heteroatoms (one of them is nitrogen) occupy vicinal substitutional …
OK1 in which two heteroatoms (one of them is nitrogen) occupy vicinal substitutional …
The effect of charge and spin state on the Infrared spectra and hyperfine coupling constants of point defects in Silicon
The effect of the charge of a point defect on the infrared spectrum and the hyperfine coupling
constants is discussed with reference to the VO defect in silicon. Five charge states have …
constants is discussed with reference to the VO defect in silicon. Five charge states have …