Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling
This paper analyses the effect of employing an Si on semi-insulating SiC (Si/SiC) device
architecture for the implementation of 600-V LDMOSFETs using junction isolation and …
architecture for the implementation of 600-V LDMOSFETs using junction isolation and …
Design, simulation and analysis of RESURF Si/SiC power LDMOSFETs
CW Chan - 2018 - wrap.warwick.ac.uk
It is necessary for power laterally diffused MOSFETs (LDMOSFETs) to operate efficiently and
reliably in high temperature (< 300 ⁰C), hostile environments such as those found in …
reliably in high temperature (< 300 ⁰C), hostile environments such as those found in …
Influential factors in low-temperature direct bonding of silicon dioxide
R Shirahama, S Duangchan… - 2015 International 3D …, 2015 - ieeexplore.ieee.org
We investigate the influential factor in low-temperature bonding of silicon dioxide. Two
surfaces were formed by thermal oxidation and plasma-enhanced chemical vapor …
surfaces were formed by thermal oxidation and plasma-enhanced chemical vapor …
Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition
T Matsumae, Y Kurashima, H Umezawa… - Materials Science …, 2020 - Trans Tech Publ
A monocrystalline diamond substrate was bonded with a Si substrate employing a direct
bonding technique. The diamond and Si surfaces were functionalized with hydroxyl (–OH) …
bonding technique. The diamond and Si surfaces were functionalized with hydroxyl (–OH) …