Active gate driver for improving current sharing performance of paralleled high-power SiC MOSFET modules
Y Wen, Y Yang, Y Gao - IEEE Transactions on power …, 2020 - ieeexplore.ieee.org
Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC
MOSFETs) are widely used in higher power density and higher efficiency power electronic …
MOSFETs) are widely used in higher power density and higher efficiency power electronic …
Active gate driver for dynamic current balancing of parallel-connected SiC MOSFETs
In high-power applications, parallel connection of discrete silicon carbide (SiC) mosfet s is
necessary to increase the current rating. However, the unbalanced dynamic current during …
necessary to increase the current rating. However, the unbalanced dynamic current during …
Parallel connection of silicon carbide MOSFETs—Challenges, mechanism, and solutions
Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …
of the power conversion systems. However, due to mismatched circuit parameters or …
A method to balance dynamic current of paralleled SiC MOSFETs with kelvin connection based on response surface model and nonlinear optimization
C Zhao, L Wang, F Zhang… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Multichip SiC power modules with Kelvin-source connection are popular in applications with
large capacity and high switching frequency. However, dynamic current imbalance among …
large capacity and high switching frequency. However, dynamic current imbalance among …
Common source inductance compensation technique for dynamic current balancing in SiC MOSFETs parallel operations
In high-current applications such as traction inverters, SiC mosfet s are paralleled to
increase the current rating. One major issue with paralleling SiC mosfet s is the dynamic …
increase the current rating. One major issue with paralleling SiC mosfet s is the dynamic …
Comprehensive analysis of paralleled sic mosfets current imbalance under asynchronous gate signals
Parallel-connected power device is an extensively applied solution in the industry to
increase the current rating of the converter system. However, due to the undesired printed …
increase the current rating of the converter system. However, due to the undesired printed …
Short Circuit Protection of Silicon Carbide MOSFETs: Challenges, Methods, and Prospects
With the fabulous growth of the renewable energy industry, silicon carbide (SiC) metal-oxide-
semiconductor field-effect transistors (mosfet s) are increasingly finding applications in …
semiconductor field-effect transistors (mosfet s) are increasingly finding applications in …
Digital close-loop active gate driver for static and dynamic current sharing of paralleled SiC MOSFETs
Silicon carbide (SiC) power devices have been extensively for high-power-density
application scenarios. To increase the current rating, SiC devices are usually connected in …
application scenarios. To increase the current rating, SiC devices are usually connected in …
Symmetric Circuit Layout With Decoupled Modular Switching Cells for Multiparalleled SiC mosfets
Parallel connection of silicon carbide metal-oxide-semiconductor transistors are widely used
in large-current-capacity applications or power modules. However, current imbalance …
in large-current-capacity applications or power modules. However, current imbalance …
Instability issue of paralleled dies in an SiC power module in solid-state circuit breaker applications
Paralleled dies in a power module could have instability issues during high current
switching transients. The instability is caused by the differential-mode oscillation among …
switching transients. The instability is caused by the differential-mode oscillation among …