Bias temperature instability of mosfets: Physical processes, models, and prediction

JF Zhang, R Gao, M Duan, Z Ji, W Zhang, J Marsland - Electronics, 2022 - mdpi.com
CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a
key issue. To optimize chip design, trade-offs between reliability, speed, power …

As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction

JF Zhang, Z Ji, W Zhang - Microelectronics Reliability, 2018 - Elsevier
Negative bias temperature instabilities (NBTI) received little attention pre-2000, but have
been intensively investigated post-2000, as they become limiting device lifetime. The …

Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects

SWM Hatta, Z Ji, JF Zhang, M Duan… - … on Electron Devices, 2013 - ieeexplore.ieee.org
Positive charges (PCs) in gate dielectric shift the threshold voltage and cause a time-
dependent device variability. To assess their impact on circuits, it is useful to know their …

A single pulse charge pumping technique for fast measurements of interface states

L Lin, Z Ji, JF Zhang, WD Zhang… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
Characterizing interface states is a key task, and it typically takes seconds when
conventional techniques, such as charge pumping (CP), are used. The stress-induced …

Negative bias temperature instability lifetime prediction: Problems and solutions

Z Ji, S Hatta, JF Zhang, JG Ma, W Zhang… - 2013 IEEE …, 2013 - ieeexplore.ieee.org
Lifetime of pMOSFETs is limited by NBTI. Conventional slow measurement overestimates
lifetime due to recovery. The fast techniques suppress recovery, but cannot give reliable …

Defects and instabilities in Hf-dielectric/SiON stacks

JF Zhang - Microelectronic engineering, 2009 - Elsevier
In this work, a review on the recent progress in understanding defects and instabilities in Hf-
dielectric/SiON stacks will be given for both nMOSFETs and pMOSFETs. The key issues …

Development of a technique for characterizing bias temperature instability-induced device-to-device variation at SRAM-relevant conditions

M Duan, JF Zhang, Z Ji, WD Zhang… - … on Electron Devices, 2014 - ieeexplore.ieee.org
SRAM is vulnerable to device-to-device variation (DDV), since it uses minimum-sized
devices and requires device matching. In addition to the as-fabricated DDV at time-zero …

Key issues and techniques for characterizing time-dependent device-to-device variation of SRAM

M Duan, JF Zhang, Z Ji, JG Ma, W Zhang… - 2013 IEEE …, 2013 - ieeexplore.ieee.org
Discreteness of aging-induced charges causes a Time-dependent Device-to-Device
Variation (TDDV) and SRAM is vulnerable to it. This work analyses the shortcomings of …

Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use-

A Manut, R Gao, JF Zhang, Z Ji… - … on Electron Devices, 2019 - ieeexplore.ieee.org
Low-power circuits are important for many applications, such as Internet of Things. Device
variations and fluctuations are challenging their design. Random telegraph noise (RTN) is …

Single Pulse Charge Pumping Technique Improvement for Interface States Profiling in the Channel of MOSFET Devices

DE Messaoud, B Djezzar, M Boubaaya… - … on Device and …, 2023 - ieeexplore.ieee.org
This paper presents the separated single pulse charge pumping (SSPCP) technique, an
improvement over conventional single pulse charge pumping (CSPCP) for analyzing metal …