Achieving atomistic control in materials processing by plasma–surface interactions
The continuous down-scaling of electronic devices and the introduction of functionally
improved novel materials require a greater atomic level controllability in the synthesis and …
improved novel materials require a greater atomic level controllability in the synthesis and …
Electron-assisted PR etching in oxygen inductively coupled plasma via a low-energy electron beam
J Jung, MS Kim, J Park, CM Lim, TW Hwang… - Physics of …, 2023 - pubs.aip.org
In this study, electron-assisted photoresist (PR) etching is conducted using oxygen
inductively coupled plasma at a pressure of 3 mTorr. During the PR etching, a low-energy …
inductively coupled plasma at a pressure of 3 mTorr. During the PR etching, a low-energy …
Electron bias control signals for electron enhanced material processing
SF Sando, SJ Anz, DI Margolese… - US Patent …, 2023 - Google Patents
Abstract Systems and methods for material processing using wafer scale waves of precisely
controlled electrons in a DC plasma is presented. A surface floating potential of a substrate …
controlled electrons in a DC plasma is presented. A surface floating potential of a substrate …
DC plasma control for electron enhanced material processing
WA Goddard, SF Sando, SJ Anz… - US Patent …, 2023 - Google Patents
Systems and methods for material processing using wafer scale waves of precisely
controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma …
controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma …
DC plasma control for electron enhanced material processing
WA Goddard, SF Sando, SJ Anz… - US Patent …, 2023 - Google Patents
Abstract Systems and methods for material processing using wafer scale waves of precisely
controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma …
controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma …
DC plasma control for electron enhanced material processing
WA Goddard, SF Sando, SJ Anz… - US Patent …, 2023 - Google Patents
Abstract Systems and methods for material processing using wafer scale waves of precisely
controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma …
controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma …
[PDF][PDF] The Production of Atomically Smooth Si (100) Surfaces at Low Temperature Using Low Energy Electron Enhanced Etching (LE4)
J Chavez - 2016 - scholarworks.calstate.edu
Modern transistors, the fundamental components used in electronic devices, are reaching
dimensions bordering on several atoms. At these sizes, the surface roughness of the Si …
dimensions bordering on several atoms. At these sizes, the surface roughness of the Si …
Atomic layer etching by electron wavefront
SJ Anz, DI Margolese, WA Goddard… - US Patent …, 2024 - Google Patents
Atomic layer etching of a substrate using a wafer scale wave of precisely controlled
electrons is presented. A volume of gaseous plasma including diluent and reactive species …
electrons is presented. A volume of gaseous plasma including diluent and reactive species …
Electron bias control signals for electron enhanced material processing
SF Sando, SJ Anz, DI Margolese… - US Patent …, 2024 - Google Patents
Abstract Systems and methods for material processing using wafer scale waves of precisely
controlled electrons in a DC plasma is presented. A surface floating potential of a substrate …
controlled electrons in a DC plasma is presented. A surface floating potential of a substrate …
Atomic layer etching by electron wavefront
SJ Anz, DI Margolese, WA Goddard… - US Patent …, 2024 - Google Patents
Atomic layer etching (ALE) of a substrate using a wafer scale wave of precisely controlled
electrons is presented. A volume of gaseous plasma including diluent and reactive species …
electrons is presented. A volume of gaseous plasma including diluent and reactive species …