On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes
The energy distribution profile of the interface states (Nss) and their relaxation time (τ) and
capture cross section (σp) of metal–insulator–semiconductor (Al/SiO2/p-Si) Schottky diodes …
capture cross section (σp) of metal–insulator–semiconductor (Al/SiO2/p-Si) Schottky diodes …
Negative capacitance phenomena in Au/SrTiO3/p-Si heterojunction structure
In this study, temperature-and frequency-dependent capacitance and conductance
measurements of the Au/SrTiO 3/p-Si heterojunction structure were examined. Strontium …
measurements of the Au/SrTiO 3/p-Si heterojunction structure were examined. Strontium …
Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements
HM Baran, A Tataroğlu - Chinese Physics B, 2013 - iopscience.iop.org
The frequency dependence of admittance measurements (capacitance-voltage (C–V) and
conductance-voltage (G/ω–V)) of Au/SnO 2/n-Si (MOS) capacitors was investigated by …
conductance-voltage (G/ω–V)) of Au/SnO 2/n-Si (MOS) capacitors was investigated by …
Dielectric Properties of Au/SrTiO3/p-Si Structure Obtained by RF Magnetron Sputtering in a Wide Frequency Range
B Kınacı - Silicon, 2022 - Springer
Dielectric properties of Au/p–Si structure with Strontium titanate (SrTiO 3) interlayer were
examined in the frequency range of 100–900 kHz (by step 100 kHz). SrTiO 3 thin film was …
examined in the frequency range of 100–900 kHz (by step 100 kHz). SrTiO 3 thin film was …
A comprehensive study on the interface states in the ECR-PECVD SiO2/p-Si MOS structures analyzed by different method
O Rejaiba, AFB de Cal, A Matoussi - Physica E: Low-dimensional Systems …, 2019 - Elsevier
The electrical properties of SiO 2/p-Si films deposited by ECR-PECVD s were studied at
different frequencies (100-1 MHz) and gate voltages (− 6–3 V). Results showed a frequency …
different frequencies (100-1 MHz) and gate voltages (− 6–3 V). Results showed a frequency …
Temperature dependent electronic transport properties of heterojunctions formed between perovskite SrTiO3 nanocubes and silicon
In this study, synthesized strontium titanate (SrTiO 3) nanocubes were coated on n-Si
semiconductor by spin coating to obtain a heterojunction device. Transmission electron …
semiconductor by spin coating to obtain a heterojunction device. Transmission electron …
On the energy distribution of interface states and their relaxation time profiles in Al/pentacene/p-GaAs heterojunction diode
The energy density distribution profile of the interface states (N ss) and their relaxation time
(τ) of Al/pentacene/p-GaAs heterojunction diodes were obtained from the admittance …
(τ) of Al/pentacene/p-GaAs heterojunction diodes were obtained from the admittance …
[PDF][PDF] Investigation of interface states in Al/SiO2/p-Si (MIS) structures with 50 and 826 Å SiO2 interfacial layer using admittance spectroscopy method
Silicon is still dominating material in the electronic industry because of the excellent
properties of its oxide and the Si/SiO2 interface. Used in semiconductor technology, Si is a …
properties of its oxide and the Si/SiO2 interface. Used in semiconductor technology, Si is a …
[PDF][PDF] SrTiO3 金属-绝缘体-半导体结构的介电与界面特性
马建华， 孙璟兰， 孟祥建， 林铁， 石富文， 褚君浩 - 2005 - wulixb.iphy.ac.cn
采用金属有机分解法在p 型Si 衬底上制备了SrTiO3 (STO) 薄膜. 研究了STO 薄膜金属1 绝缘体1
半导体(MIS) 结构的介电和界面特性. 结果表明, STO 薄膜显示出优异的介电性能, 在10kHz …
半导体(MIS) 结构的介电和界面特性. 结果表明, STO 薄膜显示出优异的介电性能, 在10kHz …
LEAKAGE CURRENT MECHANISMS OF SrTiO3 THIN FILMS WITH MIS STRUCTURES
JH Ma, XJ Meng, T Lin, SJ Liu, JL Sun… - Integrated …, 2005 - Taylor & Francis
SrTiO3 (STO) thin films with (200) preferential orientation were deposited on p-Si (100)
substrates at 700° C by RF magnetron sputtering technique. Their leakage current …
substrates at 700° C by RF magnetron sputtering technique. Their leakage current …