Physics based analysis of a high-performance dual line tunneling TFET with reduced corner effects
To improve the DC and analog/HF performance, a novel dual line tunneling based TFET
(DLT-ES-TFET) with elevated source and L-shaped pocket is proposed in this manuscript. In …
(DLT-ES-TFET) with elevated source and L-shaped pocket is proposed in this manuscript. In …
An analytical drain current modelling of DMGC CGAA FET: a circuit level implementation
PK Mudidhe, BR Nistala - Physica Scripta, 2023 - iopscience.iop.org
The GAA FET has emerged as a promising device due to its excellent control over short-
channel effects and improved electrostatic control. This manuscript presents the analytical …
channel effects and improved electrostatic control. This manuscript presents the analytical …
DFT based atomic modeling and temperature analysis on the RF and VTC curve of high-k dielectric layer-assisted NCFET
R Mann, R Chaujar - Physica Scripta, 2023 - iopscience.iop.org
Abstract In this report, Density Functional Theory (DFT) based calculation using a Quantum
Atomistic Tool Kit (ATK) simulator is done for the hafnia-based ferroelectric material. The …
Atomistic Tool Kit (ATK) simulator is done for the hafnia-based ferroelectric material. The …