2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects
The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
[HTML][HTML] Atomically precise graphene nanoribbon heterojunctions from a single molecular precursor
The rational bottom-up synthesis of atomically defined graphene nanoribbon (GNR)
heterojunctions represents an enabling technology for the design of nanoscale electronic …
heterojunctions represents an enabling technology for the design of nanoscale electronic …
Analytical modeling and simulation-based optimization of broken gate TFET structure for low power applications
R Dutta, SK Sarkar - IEEE transactions on electron devices, 2019 - ieeexplore.ieee.org
In this paper, we have reported a renovated silicon-based tunnel field-effect transistor
(TFET) structure with a channel length of 21 nm. The proposed structure has been optimized …
(TFET) structure with a channel length of 21 nm. The proposed structure has been optimized …
Tunnel field effect transistor (TFET): A review
FA Omar, TM Abdolkader - International Journal of Materials …, 2024 - ijmti.journals.ekb.eg
Tunnel field effect transistors (TFETs) offer a solution to the concerns that accompanied
conventional Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) as a result of …
conventional Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) as a result of …
Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and Analog/RF performance enhancement
C Li, X Zhao, Y Zhuang, Z Yan, J Guo, R Han - Superlattices and …, 2018 - Elsevier
L-shaped tunneling field-effect transistor (LTFET) has larger tunnel area than planar TFET,
which leads to enhanced on-current I ON. However, LTFET suffers from severe ambipolar …
which leads to enhanced on-current I ON. However, LTFET suffers from severe ambipolar …
Effect of scaling on noise in circular gate TFET and its application as a digital inverter
This paper reports the analysis of noise in Circular Gate TFET in presence of interface traps
(Gaussian) when the device is subjected to scaling of gate-drain underlap length and body …
(Gaussian) when the device is subjected to scaling of gate-drain underlap length and body …
Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates …
In this paper, a new junctionless graphene nanoribbon tunnel field-effect transistor (JLGNR
TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally …
TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally …
A computational study of a carbon nanotube junctionless tunneling field-effect transistor (CNT-JLTFET) based on the charge plasma concept
SH Tahaei, SS Ghoreishi, R Yousefi… - Superlattices and …, 2019 - Elsevier
In this work, a carbon nanotube junctionless tunnel field-effect transistor has been proposed
and investigated. The presented structure uses two isolated gates with the same work …
and investigated. The presented structure uses two isolated gates with the same work …
[HTML][HTML] A new ultra-scaled graphene nanoribbon junctionless tunneling field-effect transistor: Proposal, quantum simulation, and analysis
K Tamersit - Journal of Computational Electronics, 2020 - Springer
In this paper, a new ultrascaled junctionless graphene nanoribbon tunnel field-effect
transistor (JL GNRTFET) is proposed through a computational study. The quantum …
transistor (JL GNRTFET) is proposed through a computational study. The quantum …
[HTML][HTML] A novel graphene nanoribbon FET with an extra peak electric field (EFP-GNRFET) for enhancing the electrical performances
MA Eshkalak, MK Anvarifard - Physics Letters A, 2017 - Elsevier
This work has provided an efficient technique to improve the electrical performance for the
Graphene Nanoribbon Field Effect Transistors (GNRFETs) successfully. The physical gate …
Graphene Nanoribbon Field Effect Transistors (GNRFETs) successfully. The physical gate …