Recent developments on the synthesis of networked nanostructures have added new
amplitudes for designing multifunctional devices, including sensors and UV photodetectors …

Single-nanowire photodetectors have potential applications in integrated optoelectronic
devices and systems. Here, bandgap-engineered GaAs 0.26 Sb 0.74 alloy nanowires were …

Nanostructured metal oxides (MOs) demonstrate good electrochemical properties and are
regarded as promising anode materials for high-performance lithium-ion batteries (LIBs) …

In this paper, we report the synthesis results of Ga 2 O 3 semiconductor nanowires (NWs) on
GaAs (100) semi-insulator substrate by vapor liquid solid (VLS) method. Our study based on …

Semiconducting nanowires grown by quasi-van-der-Waals epitaxy on graphite flakes are a
new class of hybrid materials that hold promise for scalable nanostructured devices within …

GaAsSb ternary alloys are fundamental components of advanced electronic and
optoelectronic devices in the future. The presence of localized states could greatly affect the …

The two-decade long research on the fabrication of nanostructures has been focused mostly
on property and application aspects, and not much on their growth mechanisms by …

In this paper, the systematic evolution process of self-assembled Au droplets is successfully
demonstrated on GaAs (111) A,(110),(100), and (111) B. On various GaAs substrates, self …

Epitaxial horizontal nanowires (NWs) have attracted much attention due to their easily large-
scale integration. From the reported literature, epitaxial growth is usually driven by …

This paper outlines some experimental results and discusses the new growth method for
growing the different Ga x O y nanomaterials formed during the outward diffusion of the …