Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
Methods and apparatuses for depositing material into high aspect ratio features, features in
a multi-laminate stack, features having positively sloped sidewalls, features having …
a multi-laminate stack, features having positively sloped sidewalls, features having …
Method of forming an enhanced unexposed photoresist layer
JW Maes, KK Kachel, DK De Roest - US Patent 11,022,879, 2021 - Google Patents
The method relates to a method of forming an enhanced unexposed photoresist layer from
an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed …
an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed …
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
2020-11-07 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Sequential infiltration synthesis apparatus
IJ Raaijmakers, JW Maes, W Knaepen… - US Patent …, 2023 - Google Patents
2017-02-28 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Thin film forming method
Y Kim, Y Kim - US Patent 12,025,484, 2024 - Google Patents
A thin film forming method includes: a first operation of supplying a source gas at a first flow
rate into a reactor; a second operation of purging the source gas in the reactor to an exhaust …
rate into a reactor; a second operation of purging the source gas in the reactor to an exhaust …
Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
S Rajavelu, J Tolle, R McCartney - US Patent 12,040,200, 2024 - Google Patents
A semiconductor processing apparatus is disclosed that may include a reaction chamber
joined by an upstream inlet flange and a downstream outlet flange wherein a longitudinal …
joined by an upstream inlet flange and a downstream outlet flange wherein a longitudinal …
Sequential infiltration synthesis apparatus and a method of forming a patterned structure
JW Maes, W Knaepen, KK Kachel… - US Patent …, 2022 - Google Patents
A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and
arranged to hold at least a first substrate; a precursor distribution and removal system to …
arranged to hold at least a first substrate; a precursor distribution and removal system to …
Substrate processing apparatus
YH Kim, YG Han, DY Kim, HS Jang, JH Lee - US Patent 11,001,925, 2021 - Google Patents
A substrate processing apparatus having improved uniformity and speed of reaction is
provided. A substrate processing apparatus includes a body portion comprising a discharge …
provided. A substrate processing apparatus includes a body portion comprising a discharge …
Substrate processing apparatus for processing substrates
J Fluit - US Patent 12,040,199, 2024 - Google Patents
The disclosure relates to substrate processing apparatus, with a first and second reactor,
each reactor configured with an elevator to transfer a boat with substrates to the reactor. The …
each reactor configured with an elevator to transfer a boat with substrates to the reactor. The …