The effective use of solar energy has become significantly important due to unnatural
weather changes and fossil fuel exhaustion. Concentrating Solar Power (CSP) technology is …

HfO 2 thin films have been synthesized by oblique angle reactive DC magnetron sputtering
technique. Present study reports the effect of deposition angle on the hydrophobic …

This paper investigates total ionization dose (TID) effects on the electrical characteristics of
Al 2 O 3/HfO 2/Al 2 O 3-based charge trapping memory (CTM) devices by 10-keV X-ray. The …

Charge-trap-assisted memory thin-film transistors (CTM-TFTs) using the engineered Al-
doped HfO2 (Al: HfO2) CTL and In–Ga–Zn–O channel were fabricated and characterized to …

Operating properties of charge-trapping-type Flash memory devices with single or stacked
structures on trapping layer are investigated in this letter. Improved operation and reliability …

Hafnia has emerged as a promising material for charge-trapping memory. However,
enhancing its trapping performance remains a significant research challenge. In this work …

The fundamental scientific ingredient in the current information society is charge trapping in
dielectric materials. The current data storage device known as NAND flash is based on …

Physical and electrical characteristics of atomic-layer-deposited high-κ nanocrystals in a at
elevated temperature have been investigated. Because the phase separation of high-κ …

Memory properties of p-Si/ultrathin/metal capacitors have been investigated, in which all the
high-dielectric films were derived by atomic layer deposition technique. Using a film as the …

As a promising candidate to replace the conventional floating gate flash memories,
polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories …