Physics-of-failure, condition monitoring, and prognostics of insulated gate bipolar transistor modules: A review

H Oh, B Han, P McCluskey, C Han… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Recent growth of the insulated gate bipolar transistor (IGBT) module market has been driven
largely by the increasing demand for an efficient way to control and distribute power in the …

A review in fault diagnosis and health assessment for railway traction drives

F Garramiola, J Poza, P Madina, J Del Olmo… - Applied Sciences, 2018 - mdpi.com
During the last decade, due to the increasing importance of reliability and availability,
railway industry is making greater use of fault diagnosis approaches for early fault detection …

Extreme learning machine optimized by whale optimization algorithm using insulated gate bipolar transistor module aging degree evaluation

LL Li, J Sun, ML Tseng, ZG Li - Expert Systems with Applications, 2019 - Elsevier
This study focuses on the aging evaluation of Insulated gate bipolar transistor (IGBT)
modules to ensure their stability during operation. An aging degree evaluation model is …

A prognostic approach for non-punch through and field stop IGBTs

N Patil, D Das, M Pecht - Microelectronics Reliability, 2012 - Elsevier
Development of prognostic approaches for insulated gate bipolar transistors (IGBTs) is of
interest in order to improve availability, reduce downtime, and prevent failures of power …

A buck-boost transformerless DC–DC converter based on IGBT modules for fast charge of electric vehicles

B Dimitrov, K Hayatleh, S Barker, G Collier, S Sharkh… - Electronics, 2020 - mdpi.com
A transformer-less Buck-Boost direct current–direct current (DC–DC) converter in use for the
fast charge of electric vehicles, based on powerful high-voltage isolated gate bipolar …

High-speed electro-thermal simulation model of inverter power modules for hybrid vehicles

Z Zhou, MS Kanniche, SG Butcup, P Igic - IET Electric Power Applications, 2011 - IET
Temperature and temperature variation cycles of insulated gate bipolar transistors (IGBTs)
are important variables for reliability assessment of inverter power module (IPM) applied in …

Anomaly detection for IGBTs using Mahalanobis distance

N Patil, D Das, M Pecht - Microelectronics Reliability, 2015 - Elsevier
In this study, a Mahalanobis distance (MD)-based anomaly detection approach has been
evaluated for non-punch through (NPT) and trench field stop (FS) insulated gate bipolar …

Analysis of clamped inductive turnoff failure in railway traction IGBT power modules under overload conditions

X Perpina, JF Serviere, J Urresti-Ibañez… - IEEE Transactions …, 2010 - ieeexplore.ieee.org
This paper studies the overload turnoff failure in the insulated-gate bipolar transistor (IGBT)
devices of power multichip modules for railway traction. After a detailed experimental …

Comparisons of two turn-off failures under clamped inductive load in planar FS 3.3 kV/50 A IGBT chip

J Fan, Y Wang, F He, M Gao, Z Zhao… - … on Power Electronics, 2022 - ieeexplore.ieee.org
Turn-off failure under clamped inductive load, is one of the most concerns in insulated gate
bipolar transistor (IGBT) chips. Besides, this turn-off failure can be attributed to two causes …

[PDF][PDF] High temperature power electronics IGBT modules for electrical and hybrid vehicles

R John, O Vermesan, R Bayerer - IMAPS, High Temperature …, 2009 - researchgate.net
IGBT are the predominant power semiconductors for high current applications in electrical
and hybrid vehicles applications. Applications with low switching frequencies (< 20 kHz) are …