The past decades have witnessed a tremendous development of GaN-based power
electronic devices grown on Si substrate. This article provides a concise introduction …

The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

Nanowire-based devices can potentially be of use in a variety of electronic applications,
from ultrascaled digital circuits to 5G communication networks. However, the devices are …

Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …

(Al) GaN recess-free normally OFF technology is developed for fabrication of high-yield
lateral GaN-based power devices. The recess-free process is achieved by an ultrathin …

In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors
(HEMTs) on Si with an ultrahigh breakdown voltage () and excellent saturation drain current …

In this article, we systematically investigate the OFF-state drain-voltage-stress-induced
threshold voltage () instability in Schottky-type p-GaN gate high electron mobility transistors …

In this letter, we report high-performance p-GaN HEMTs on Si with robust gate operation. For
the first time, the preserved OFF-state drain blocking capability has been demonstrated in p …

Enhancement-mode GaN MOS-HEMTs with a uniform threshold voltage (V th~ 2.2±0.25 V at
ID= 1 μA/mm) have been achieved by a recess-free barrier engineering technique in …

Device surface properties are critical for its performance such as channel electron density,
leakage current, subthreshold swing (SS), and noise in gallium nitride high-electron-mobility …