The room temperature hole conductivity of the ultra-wide bandgap semiconductor β-Ga 2 O
3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices …

This study employed RF magnetron sputtering with a ceramic stoichiometric Gallium oxide
(Ga 2 O 3) target to deposit thin films on c-sapphire substrates, investigating the impact of …

In this article, we report on the fabrication of-Ga2O3 pseudo-CMOS inverters using
enhancement-mode (E-mode)-Ga2O3 single-finger (and multifinger (thin-film transistors …

In this study, in situ, Si‐doped heteroepitaxial Ga2O3 layers are grown on c‐plane sapphire
by metalorganic chemical vapor deposition. The X‐ray diffraction peaks of the doped Ga2O3 …

Ga 2 O 3 has been considered as one of the most suitable materials for x-ray detection, but
its x-ray detection performance is still at a low level due to the limitation of its quality and …

The room temperature hole conductivity of the ultra wide bandgap semiconductor beta
Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic …

The heteroepitaxial growth of β-Ga 2 O 3 on the commonly used sapphire substrate presents
great challenges due to their large lattice mismatch. To address this, a NiO buffer layer is …

The metastable corundum gallium oxide (α-Ga 2 O 3) features advantageous properties in
comparison to the thermodynamically stable monoclinic β-Ga 2 O 3 phase, such as wider …

ABSTRACT Gallium oxide (Ga2O3) p–n heterojunctions play an important role in
addressing the difficulties in Ga2O3 p-type doping. Therefore, an efficient and economical …

Power electronic devices are expected to play a pivotal role in next-generation applications
that demand high power and high voltage, surpassing the capabilities of conventional …