Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …

Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …

Boron nitride occurs in several polymorphs, among which cubic and hexagonal varieties
have been extensively studied over many years and have found numerous practical …

Providing insider viewpoints and perspectives unavailable in any other text, this book
presents useful guidelines and tools to produce effective coatings and films. Covering …

Cubic boron nitride (c-BN) thin films are of significant interest because of their diamond like
structure and properties. c-BN shows high thermal conductivity, chemical inertness against …

Cubic BN (cBN) has a set of extreme properties similar or even superior to diamond. The
advance of science and technology of cBN has however been severely hampered by the …

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-
efficient power-electronics devices. Their wider band gaps result in higher breakdown …

The authors demonstrate that the electric conductivities of cubic and hexagonal boron nitride
(⁠ cB N and hB N⁠) thin films increased markedly by the in situ doping of zinc. The doped …

立方氮化硼(c-BN) 作为闪锌矿面心立方结构的Ⅲ-Ⅴ 族二元化合物, 是第三代半导体中禁带宽度
最大的材料, 还具有高热导率, 高硬度, 耐高温, 耐氧化, 化学稳定性好, 透光波长范围广, 可实现p …

Diamond and cBN are two of the most promising ultra-wide bandgap semiconductors for
applications in high-power high-frequency electronic devices. Despite extensive studies on …