Systematic study of the exchange interactions in Gd-doped GaN containing N interstitials, O interstitials, or Ga vacancies
A Thiess, S Blügel, PH Dederichs, R Zeller… - Physical Review B, 2015 - APS
Using large supercells models and the KKRnano multiple scattering approach, statistically
meaningful information is obtained on the distribution of local densities of states, magnetic …
meaningful information is obtained on the distribution of local densities of states, magnetic …
Electronic structure of magnetic impurities and defects in semiconductors: A guide to the theoretical models
WRL Lambrecht - Rare Earth and Transition Metal Doping of …, 2016 - Elsevier
In the first part of this chapter, sections 1-4, we provide an introduction to the various
theoretical and computational approaches relevant to dilute magnetic semiconductors. After …
theoretical and computational approaches relevant to dilute magnetic semiconductors. After …
Structural and defect characterization of Gd-doped GaN films by X-ray diffraction and positron annihilation
A Yabuuchi, N Oshima, BE O'Rourke… - Journal of Physics …, 2014 - iopscience.iop.org
Molecular-beam-epitaxy-grown Ga 1-x Gd x N films were investigated by X-ray diffraction
and slow positron beams. From the positron lifetime results, N-vacancy-related defects may …
and slow positron beams. From the positron lifetime results, N-vacancy-related defects may …
Defect–defect magnetic coupling in Gd doped GaN epitaxial films: A polarization selective magneto-photoluminescence study
Here, we have carried out a magnetic field dependent polarization selective
photoluminescence (PL) study at 1.5 K on Gd-doped GaN epitaxial layers grown on c-SiC …
photoluminescence (PL) study at 1.5 K on Gd-doped GaN epitaxial layers grown on c-SiC …
Optical probe in gadolinium doped GaN by metalorganic Chemical Vapor Deposition
XP Shu, A Melton, ZR Qiu, LT Ferguson… - Applied Mechanics and …, 2013 - Trans Tech Publ
Gd doping related excitons are observed in four samples with different gadolinium (Gd)
adoption ratios, grown by metalorganic Chemical Vapor Deposition (MOCVD). The intensity …
adoption ratios, grown by metalorganic Chemical Vapor Deposition (MOCVD). The intensity …
Photoluminescence properties in GaGdN grown on GaN (0001) by PA-MBE
K Higashi, S Hasegawa, S Sano, YK Zhou… - Journal of crystal …, 2013 - Elsevier
We have investigated optical property of GaGdN grown on GaN template by radio-frequency
plasma-assisted molecular beam epitaxy by varying the concentration of Gd. All the samples …
plasma-assisted molecular beam epitaxy by varying the concentration of Gd. All the samples …