Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP
H Folliot, S Loualiche, B Lambert, V Drouot, A Le Corre - Physical Review B, 1998 - APS
In the present work we have investigated the optical properties of the self-assembled
quantum dots (SAQD's) on an InP substrate. The dots are grown by gas source molecular …
quantum dots (SAQD's) on an InP substrate. The dots are grown by gas source molecular …
RHEED investigation of the formation process of InAs quantum dots on (1 0 0) InAlAs/InP for application to photonic devices in the 1.55 μm range
BH Koo, T Hanada, H Makino, JH Chang, T Yao - Journal of crystal growth, 2001 - Elsevier
Self-assembled InAs quantum dots (QDs) on In0. 52Al0. 48As lattice matched to (100) InP
substrates were grown by solid-source molecular beam epitaxy. We present in situ reflection …
substrates were grown by solid-source molecular beam epitaxy. We present in situ reflection …
GaInAsP/InP quantum wire lasers
S Arai, T Maruyama - IEEE Journal of Selected Topics in …, 2009 - ieeexplore.ieee.org
Present status of GaInAsP/InP long-wavelength quantum wire lasers, fabricated by a method
using electron beam exposure, dry etching, and two-step organometallic vapor-phase …
using electron beam exposure, dry etching, and two-step organometallic vapor-phase …
Light scattering and atomic force microscopy study of InAs island formation on InP
I Rasnik, M Brasil, F Cerdeira, CAC Mendonca… - Journal of Applied …, 2000 - pubs.aip.org
Some aspects of the morphology of InAs island formation on InP have been studied by
atomic force microscopy, photoluminescence, photoluminescence excitation spectroscopy …
atomic force microscopy, photoluminescence, photoluminescence excitation spectroscopy …
Weak localization in laterally coupled quantum wires
O Bierwagen, C Walther, WT Masselink, KJ Friedland - Physical Review B, 2003 - APS
The magnetotransport properties of laterally coupled self-organized InAs quantum wires are
investigated, focusing on the contributions to conductivity resulting from weak localization …
investigated, focusing on the contributions to conductivity resulting from weak localization …
Korrelation elektronischer und struktureller Eigenschaften selbstorganisierter InAs-Nanostrukturen der Dimensionen 0 und 1 auf Verbindungshalbleitern
C Walther - 2000 - edoc.hu-berlin.de
Das gitterfehlangepaßte Kristallwachstum führt unter bestimmten Bedingungen zu einem 3-
D Wachstumsmodus, der oft Stranski-Krastanow-Wachstum genannt wird. Resultierende …
D Wachstumsmodus, der oft Stranski-Krastanow-Wachstum genannt wird. Resultierende …
Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates
YF Li, XL Ye, FQ Liu, B Xu, D Ding, WH Jiang… - Applied surface …, 2000 - Elsevier
The effects of InP substrate orientations on self-assembled InAs quantum dots (QDs) have
been investigated by molecular beam epitaxy (MBE). A comparison between atomic force …
been investigated by molecular beam epitaxy (MBE). A comparison between atomic force …
Croissance et spectroscopie de boîtes quantiques diluées d'InAs/InP (001) pour des applications nanophotoniques à 1, 55 µm
E Dupuy - 2009 - theses.hal.science
Ce travail porte sur la croissance épitaxiale et la caractérisation optique de boîtes
quantiques d'InAs/InP (001) en faible densité en vue de la réalisation de nouveaux …
quantiques d'InAs/InP (001) en faible densité en vue de la réalisation de nouveaux …
[PDF][PDF] Etude des propriétés optiques de puits quantiques contraints ultra-minces d'InAs/InP
A Lanacer - 2006 - papyrus.bib.umontreal.ca
Cet. te thèse porte sur fétude des propriétés optiques de puits quantiques (PQs) contraints
ultra-minces «InAs/InP obtenues par la technique de croissance épi taxiale en phase vapeur …
ultra-minces «InAs/InP obtenues par la technique de croissance épi taxiale en phase vapeur …
[PDF][PDF] Estudo de propriedades elétricas no sistema tensionado InAs/InP
KO Vicaro - 2002 - repositorio.unicamp.br
Este trabalho teve como objetivo implementar novas técnicas de microscopia por varredura
com ponta de prova no equipamento existente no LPD/DFA/UNICAMP e aplicá-las ao …
com ponta de prova no equipamento existente no LPD/DFA/UNICAMP e aplicá-las ao …