Fully integrated 94-GHz dual-polarized TX and RX phased array chipset in SiGe BiCMOS operating up to 105° C

W Lee, JO Plouchart, C Ozdag… - IEEE Journal of Solid …, 2018 - ieeexplore.ieee.org
94-GHz dual-polarized phased array transmitter and receiver ICs in 130 nm BiCMOS
technology are reported. The transmitter IC integrates 16 transmitter front ends with two …

A Very Low Phase-Noise Transformer-Coupled Oscillator and PLL for 5G Communications in 0.12 m SiGe BiCMOS

E Wagner, O Shana'a… - IEEE transactions on …, 2019 - ieeexplore.ieee.org
This article presents a 9.9-12.45 GHz voltage-controlled oscillator (VCO) designed in 0.12
μm SiGe BiCMOS with a focus on achieving the lowest possible phase noise using only a …

A 170-GHz 23.7% tuning-range CMOS injection-locked LO generator with third-harmonic enhancement

X Liu, HC Luong - IEEE Transactions on Microwave Theory and …, 2020 - ieeexplore.ieee.org
This article proposes a harmonic-extraction technique to enhance the amplitude and the
phase noise of LC oscillators at the third-harmonic frequency. By leveraging this technique …

A 28-GHz Low Phase Noise Class-C Transformer VCO With 187-dBc/Hz FoM in 90-nm SiGe BiCMOS

Z Hu, E Wagner, TC Hsueh… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article presents a 27.9–28.8-GHz voltage-controlled oscillator (VCO) in a 90-nm SiGe
BiCMOS process. The VCO consists of class-C active devices and a transformer tank. A …

Analysis and design of the tank feedline in millimeter-wave VCOs

S Alzahrani, S Elabd, S Smith, A Naguib… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
This article presents a detailed analysis of the impact of the tank feedline on tuning range
(TR) and phase noise (PN) in millimeter-wave LC voltage-controlled oscillators (VCOs). A …

Design and performance analysis of low phase noise LC-voltage controlled oscillator

R Gurjar, DK Mishra - … Computing Electronics and Control), 2023 - telkomnika.uad.ac.id
Voltage controlled oscillator (VCO) offers the radio frequency (RF) system designer a
freedom to select the required frequency. Today's wireless communication system imposes …

Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs

ZR Brumbach, D Nergui, JW Teng… - … on Nuclear Science, 2023 - ieeexplore.ieee.org
A comparison of laser-induced single-event transients (SETs) in silicon-germanium
heterojunction bipolar transistor (SiGe HBT) variants designed for high-speed (HS) …

Angular-momentum biased circulator with locally generated modulation

HM Kadry, M Alhawari… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
This article presents a novel type of time-modulated magnetless circulators, where
modulation is generated locally at each modulated element through a network of local …

A low phase noise X-band quadrature VCO by using transconductance linearization technique

Q Xia, C Cao, JF Liu, T Tan, XP Li - … Conference on Microwave …, 2019 - ieeexplore.ieee.org
This paper presents a quadrature voltage-controlled-oscillator (QVCO) based on
transconductance linearization technique. In this design, the LC-Tank was decoupled form …

A 23-30 GHz Low-Phase-Noise 5-Bit Voltage-Controlled Oscillator in 90-nm CMOS Process

PY Chen, JL Chen, HY Chang - 2024 IEEE 24th Topical …, 2024 - ieeexplore.ieee.org
In this paper, a Ka-band 5-bit voltage-controlled oscillator (VCO) is presented using a 90-nm
CMOS process. The proposed VCO is composed of 5-bit switched-capacitor array (SCA) …