Surface photovoltage and modulation spectroscopy of E− and E+ transitions in GaNAs layers
Surface photovoltage (SPV) spectra were measured for GaN 0.014 As 0.986 layers at room
temperature and compared with room temperature photoreflectance (PR) and contactless …
temperature and compared with room temperature photoreflectance (PR) and contactless …
Carrier dynamics in type-II GaAsSb/GaAs quantum wells
Time-resolved photoluminescence (PL) characteristics of type-II GaAsSb/GaAs quantum
wells are presented. The PL kinetics are determined by the dynamic band bending effect …
wells are presented. The PL kinetics are determined by the dynamic band bending effect …
Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells: spectroscopic experiment versus 10-band k· p modeling
Optical transitions in GaAs 1− x N x/GaAs quantum wells (QWs) have been probed by two
complementary techniques, modulation spectroscopy in a form of photoreflectance and …
complementary techniques, modulation spectroscopy in a form of photoreflectance and …
[HTML][HTML] Influence of strain and dislocations on GaSb/GaAs quantum dots: From nested to staggered band alignment
BC McGuigan, AS Chang, C Greenhill… - Journal of Applied …, 2022 - pubs.aip.org
We investigate the influence of strain and dislocations on band alignment in GaSb/GaAs
quantum dot systems. Composition profiles from cross-sectional scanning tunneling …
quantum dot systems. Composition profiles from cross-sectional scanning tunneling …
[HTML][HTML] GaAs 基1.55 微米自组织InAs 量子点材料生长研究进展
曾丽娜， 杨云帆， 秦振， 李林， 刘兆悦， 李再金… - Modern …, 2021 - hanspub.org
光纤通讯用GaAs 基高性能1.55 微米量子点激光器引起了人们的广泛关注. 然而,
由较大晶格失配引起的应变, 位错等缺陷, 导致GaAs 基InAs 量子点材料的光增益严重降低 …
由较大晶格失配引起的应变, 位错等缺陷, 导致GaAs 基InAs 量子点材料的光增益严重降低 …
Temperature dependent surface photovoltage spectra of type I GaAs1− xSbx/GaAs multiple quantum well structures
We present temperature dependent surface photovoltage spectra of GaAs 1− x Sb x/GaAs
multiple quantum well structures. Our previous studies [Sitarek et al., J. Appl. Phys. 105 …
multiple quantum well structures. Our previous studies [Sitarek et al., J. Appl. Phys. 105 …
[PDF][PDF] Development of novel semiconductor materials and type-II heterostructures for infrared applications
DA Duffy - 2023 - openresearch.surrey.ac.uk
With the increasing demand for data-intensive applications, developing higher efficiency
and more thermally stable near-infrared semiconductor lasers is of significant interest for the …
and more thermally stable near-infrared semiconductor lasers is of significant interest for the …
Optical characterization of a strain-compensated GaAs0. 64Sb0. 36/GaAs0. 79P0. 21 quantum well structure grown by metal organic vapor phase epitaxy
Optical characterization of a strained GaAs0. 64Sb0. 36/GaAs and a strain-compensated
GaAs0. 64Sb0. 36/GaAs0. 79P0. 21 triple quantum well (TQW) structures grown by metal …
GaAs0. 64Sb0. 36/GaAs0. 79P0. 21 triple quantum well (TQW) structures grown by metal …
Optical characterization of a GaAsSb/GaAs/GaAsP strain-compensated quantum well structure grown by metal-organic vapor phase epitaxy
CT Huang, JD Wu, CF Liu, YS Huang, CT Wan… - Journal of crystal …, 2013 - Elsevier
Optical properties of a strained GaAs0. 64Sb0. 36/GaAs and a strain-compensated GaAs0.
64Sb0. 36/GaAs/GaAs0. 79P0. 21 triple quantum well (TQW) structures were investigated by …
64Sb0. 36/GaAs/GaAs0. 79P0. 21 triple quantum well (TQW) structures were investigated by …
[PDF][PDF] Optical Transitions between Confined and Unconfined States in p-Type Asymmetric GaAs/InGaAs/AlGaAs QW Structures
We present contactless surface photovoltage spectroscopy and photoreflectance studies of
10 nm wide, p-type doped asymmetric GaAs/InGaAs/AlGaAs quantum well structures. The …
10 nm wide, p-type doped asymmetric GaAs/InGaAs/AlGaAs quantum well structures. The …