Recovery of SIMS depth profiles with account for nonstationary effects
PA Yunin, YN Drozdov, MN Drozdov… - Applied surface science, 2014 - Elsevier
In this work we consider a method of accounting for the nonstationary effects in recovery of
SIMS depth profiles. The depth resolution function (DRF) is described by Hofmann's …
SIMS depth profiles. The depth resolution function (DRF) is described by Hofmann's …
[PDF][PDF] Improvements in TOF-SIMS instrumentation for analytical application and fundamental research
T Grehl - 2003 - Citeseer
Currently, nano-technology is one of the most active areas of applied academic and
industrial research, documenting the ongoing trend to sub-µm scale technology. In the last …
industrial research, documenting the ongoing trend to sub-µm scale technology. In the last …
Atomic spectrometry update. Atomic mass spectrometry
JR Bacon, JC Greenwood, L Van Vaeck… - Journal of Analytical …, 2003 - pubs.rsc.org
6.2 Fundamental studies 6.3 Analytical methodology 6.4 Quantification 6.5 Single and multi-
dimensional analysis 6.5. 1 Depth profiling 6.5. 2 Imaging 6.5. 3 Three dimensional (3-D) …
dimensional analysis 6.5. 1 Depth profiling 6.5. 2 Imaging 6.5. 3 Three dimensional (3-D) …
Response function during oxygen sputter profiling and its application to deconvolution of ultrashallow B depth profiles in Si
L Shao, J Liu, C Wang, KB Ma, J Zhang, J Chen… - Applied physics …, 2003 - pubs.aip.org
The secondary ion mass spectrometry (SIMS) response function to a B “δ surface layer” has
been investigated. Using electron-gun evaporation combined with liquid nitrogen cooling of …
been investigated. Using electron-gun evaporation combined with liquid nitrogen cooling of …
[PDF][PDF] Развитие методов вторично-ионной масс-спектрометрии и рентгеновской дифрактометрии для исследования многослойных полупроводниковых …
ПА Юнин - 2016 - diss.unn.ru
Развитие микро-и оптоэлектроники, совершенствование технологии изготовления
многослойных полупроводниковых гетероструктур, а также усложнение их дизайна …
многослойных полупроводниковых гетероструктур, а также усложнение их дизайна …
Response function during oxygen sputter profiling for deconvolution of boron spatial distribution
L Shao, J Liu, C Wang, KB Ma, J Zhang, J Chen… - Nuclear Instruments and …, 2004 - Elsevier
We have studied the spatial distribution of a surface deposited boron layer by secondary ion
mass spectrometry (SIMS) using oxygen beams of various incident energies. A boron layer …
mass spectrometry (SIMS) using oxygen beams of various incident energies. A boron layer …
[引用][C] Surface and Interface Stldy of Materials Using Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS)
S Jain - 2018 - National Institute of Technology …