Organic Thin Film Transistors (OTFTs) mark a breakthrough in flexible electronics, offering
advantages over traditional inorganic semiconductors through their adaptability, cost …

In this study, we examined the effects of aluminum oxide (Al 2 O 3) surface passivation on
the radiation damage of indium-gallium-tin oxide (IGTO) thin films and radiation hardness of …

High‐performance, spray‐pyrolyzed amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin‐
film transistor (TFT) with self‐aligned (SA) coplanar structure is demonstrated. The spray …

Top-gate self-aligned structured oxide thin-film transistors (TFTs) are suitable for the
backplanes of high-end displays because of their low parasitic capacitances. The gate …

Solution-processed indium gallium tin oxide (InGaSnO, IGTO) thin film transistors (TFTs) are
investigated as promising low-cost and stable materials for high-performance amorphous …

In this work, we examined the mechanical durability of island-type a-IGZO thin-film
transistors (TFTs). Island TFTs were fabricated on polyimide (PI) islands and were …

We achieved the lowest contact resistance between a-IGZO and a metal electrode for> 30
GHz operation of an oxide semiconductor device. For high-resolution display and high …

In this study, an all-inorganic lead-free halide perovskite Cs 2 InCl 5 (H 2 O) was
synthesized using a hydrothermal method. Considering the structural characteristics of Cs 2 …

In this study, we investigated the effects of film thickness (t ch) on the radiation damage of
indium-gallium-tin oxide (IGTO) thin films and radiation tolerance of high-mobility IGTO thin …

The interest in low processing temperature for printable transistors is rapidly increasing with
the introduction of a new form factor in electronics and the growing importance of high …