The physics of hole transport in pseudomorphic Si 1− x Ge x/Si (001) is investigated by
Monte Carlo simulation. The Monte Carlo method developed in this work takes into account …

A detailed study of the photoluminescence (PL) and photoluminescence excitation (PLE)
properties of Al0. 48In0. 52As is presented. A PL linewidth of 13 meV and a Stokes shift of …

We demonstrate InP PICs with avalanche photodiodes (APD) consisting of InP and InAlAs
multiplication regions and investigate these devices regarding their DC and RF linearity …

The optical and transport properties of In 0.52 Al o. 48 As grown by molecular beam epitaxy
have been studied as a function of growth temperature in the range of 300-520° C. It is …

In this study we report the V/III ratio effects on growth, structural, optical and doping
characteristics of low growth rate (∼ 1 Å/s) heteroepitaxial Metal Organic Chemical Vapor …

The Schottky barrier height of n‐type semiconducting and semi‐insulating In x Al1− x As
grown by molecular beam epitaxy has been determined on the lattice‐matched composition …

High‐quality InAlAs with excellent photoluminescence and low electron concentrations has
been grown by organometallic vapor phase epitaxy (OMVPE). For InAlAs lattice matched to …

In order to clarify the low field transport properties of two-dimensional electron gas (2DEG) in
selectively doped (SD) AlGaAs/GaInAs/GaAs pseudomorphic structures, electron effective …

The quality and properties of epitaxial films are strongly determined by the reactor type and
the precursor source phase. Such parameters can impose limitations in terms of background …

Theoretical results of electron transport in n‐type In0. 52Al0. 48As are presented. The
transport properties of this important semiconductor were obtained using the Monte Carlo …