A State-of-the-Art Review on CMOS Radio Frequency Power Amplifiers for Wireless Communication Systems
Wireless communication systems have undergone significant development in recent years,
particularly with the transition from fourth generation (4G) to fifth generation (5G). As the …
particularly with the transition from fourth generation (4G) to fifth generation (5G). As the …
A wideband class-AB power amplifier with 29–57-GHz AM–PM compensation in 0.9-V 28-nm bulk CMOS
M Vigilante, P Reynaert - IEEE Journal of Solid-State Circuits, 2017 - ieeexplore.ieee.org
A wideband amplitude to phase (AM-PM) compensated class-AB power amplifier (PA)
suitable for highly integrated fifth-generation phased arrays is designed in 0.9-V 28-nm …
suitable for highly integrated fifth-generation phased arrays is designed in 0.9-V 28-nm …
Highly linear mm-wave CMOS power amplifier
A Ka-band highly linear power amplifier (PA) is implemented in 28-nm bulk CMOS
technology. Using a deep class-AB PA topology with appropriate harmonic control circuit …
technology. Using a deep class-AB PA topology with appropriate harmonic control circuit …
Push the envelope: Design concepts for envelope-tracking power amplifiers
As mobile communication systems evolve to handle higher data rates, their modulation
schemes only become more complicated, generating signals with large bandwidth and high …
schemes only become more complicated, generating signals with large bandwidth and high …
Design of a transformer-based reconfigurable digital polar Doherty power amplifier fully integrated in bulk CMOS
This paper presents a digital polar Doherty power amplifier (PA) fully integrated in a 65 nm
bulk CMOS process. It achieves+ 27.3 dBm peak output power and 32.5% peak PA drain …
bulk CMOS process. It achieves+ 27.3 dBm peak output power and 32.5% peak PA drain …
A broadband mixed-signal CMOS power amplifier with a hybrid class-G Doherty efficiency enhancement technique
This paper presents a broadband mixed-signal CMOS power amplifier (PA) with a hybrid
Class-G Doherty architecture for PA efficiency enhancement up to the deep power back-off …
Class-G Doherty architecture for PA efficiency enhancement up to the deep power back-off …
Highly linear high-power 802.11 ac/ax WLAN SiGe HBT power amplifiers with a compact 2nd-harmonic-shorted four-way transformer and a thermally compensating …
This article presents the design of a highly linear high-power silicon-germanium (SiGe)
heterojunction bipolar transistor (HBT) 802.11 ac/aχ wireless local area network (WLAN) …
heterojunction bipolar transistor (HBT) 802.11 ac/aχ wireless local area network (WLAN) …
CMOS power amplifier integrated circuit with dual-mode supply modulator for mobile terminals
A CMOS power amplifier integrated circuit with an optimized dual-mode supply modulator is
presented. The dual-mode supply modulator, based on a hybrid buck converter consisting of …
presented. The dual-mode supply modulator, based on a hybrid buck converter consisting of …
Highly linear fully integrated wideband RF PA for LTE-advanced in 180-nm SOI
B François, P Reynaert - IEEE Transactions on Microwave …, 2014 - ieeexplore.ieee.org
A highly linear fully integrated RF power amplifier (PA) for advanced long-term evolution
(LTE-advanced) is fabricated in a 180-nm standard silicon-on-insulator process. To improve …
(LTE-advanced) is fabricated in a 180-nm standard silicon-on-insulator process. To improve …
High-performance CMOS power amplifier with improved envelope tracking supply modulator
A differential cascode CMOS power amplifier (PA) with a supply modulator for envelope
tracking (ET) has been implemented using 0.18-μm RF CMOS technology. For maximizing …
tracking (ET) has been implemented using 0.18-μm RF CMOS technology. For maximizing …