The optical gain and the refractive index change of a uniaxially stressed GaAs-Al/sub
2/Ga/sub 1-x/As quantum-well laser is studied theoretically using the multiband effective …

Single‐quantum‐well structures were grown by atmospheric pressure organometallic vapor‐
phase epitaxy, with Ga x In1− x As layers (0≤ x≤ 1) coherently strained to match the lattice …

We report on a MQW electroabsorption modulator with tensile-strained wells. The device
transmission is shown to be fully polarization insensitive, ie both in amplitude and phase …

In this letter we present experimental results demonstrating the effects of tensile strain on the
ground‐state hole eigenenergies of strained GaAsP/AlGaAs quantum wells (QWs) grown by …

Experimental investigation of the energy-band structure of (111) B and (100) In y Ga 1− y As
quantum wells demonstrates that the strain-induced heavy-hole to light-hole energy splitting …

Electrooptical modulators based on quantum well structures have become an important area
of research due to potential applications in high-speed optical modulation and image …

We have experimentally determined the magnitude of the light-hole-heavy-hole exciton
energy difference as a function of biaxial tensile strain in GaAsP/AlGaAs quantum wells …

Abstract The two-dimensional (2D) electron concentration and mobility in pseudomorphic In
x Ga 1-x As/N-In 0.52 Al 0.48 As (x= 0.53, 0.64, and 0.75) heterostructures were studied. The …

The sub-band energies of In x Ga 1-x As quantum wells strained between GaAs barriers and
substrate are calculated using a model which takes into account strain, nonparabolicity and …

A new approach for enhancing the exciton absorption and increasing the saturation limit in
quantum wells (QWs), using tensile strain, is proposed. Because of the valence‐band mixing …