Optical gain in a strained-layer quantum-well laser
D Ahn, C Shun-Lien - IEEE journal of quantum electronics, 1988 - ieeexplore.ieee.org
The optical gain and the refractive index change of a uniaxially stressed GaAs-Al/sub
2/Ga/sub 1-x/As quantum-well laser is studied theoretically using the multiband effective …
2/Ga/sub 1-x/As quantum-well laser is studied theoretically using the multiband effective …
Strain effects on GaxIn1−xAs/InP single quantum wells grown by organometallic vapor‐phase epitaxy with 0≤x≤1
TY Wang, GB Stringfellow - Journal of applied physics, 1990 - pubs.aip.org
Single‐quantum‐well structures were grown by atmospheric pressure organometallic vapor‐
phase epitaxy, with Ga x In1− x As layers (0≤ x≤ 1) coherently strained to match the lattice …
phase epitaxy, with Ga x In1− x As layers (0≤ x≤ 1) coherently strained to match the lattice …
Full polarization insensitivity of a 20 Gb/s strained-MQW electroabsorption modulator
F Devaux, S Chelles, A Ougazzaden… - IEEE photonics …, 1994 - ieeexplore.ieee.org
We report on a MQW electroabsorption modulator with tensile-strained wells. The device
transmission is shown to be fully polarization insensitive, ie both in amplitude and phase …
transmission is shown to be fully polarization insensitive, ie both in amplitude and phase …
Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition
DC Bertolet, JK Hsu, KM Lau - Applied physics letters, 1988 - pubs.aip.org
In this letter we present experimental results demonstrating the effects of tensile strain on the
ground‐state hole eigenenergies of strained GaAsP/AlGaAs quantum wells (QWs) grown by …
ground‐state hole eigenenergies of strained GaAsP/AlGaAs quantum wells (QWs) grown by …
Strain-induced heavy-hole-to-light-hole energy splitting in (111)B pseudomorphic As quantum wells
Experimental investigation of the energy-band structure of (111) B and (100) In y Ga 1− y As
quantum wells demonstrates that the strain-induced heavy-hole to light-hole energy splitting …
quantum wells demonstrates that the strain-induced heavy-hole to light-hole energy splitting …
Theoretical studies of optical modulation in lattice matched and strained quantum wells due to transverse electric fields
S Hong, M Jaffe, J Singh - IEEE journal of quantum electronics, 1987 - ieeexplore.ieee.org
Electrooptical modulators based on quantum well structures have become an important area
of research due to potential applications in high-speed optical modulation and image …
of research due to potential applications in high-speed optical modulation and image …
Reversal of light-and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells
ES Koteles, DA Owens, DC Bertolet, JK Hsu, KM Lau - Surface science, 1990 - Elsevier
We have experimentally determined the magnitude of the light-hole-heavy-hole exciton
energy difference as a function of biaxial tensile strain in GaAsP/AlGaAs quantum wells …
energy difference as a function of biaxial tensile strain in GaAsP/AlGaAs quantum wells …
Electronic properties of two-dimensional electron gas in pseudomorphic InxGa1− xAs/N-In0. 52Al0. 48As heterostructures
S Sasa, Y Nakata, Y Sugiyama, T Fujii… - Journal of Crystal …, 1989 - Elsevier
Abstract The two-dimensional (2D) electron concentration and mobility in pseudomorphic In
x Ga 1-x As/N-In 0.52 Al 0.48 As (x= 0.53, 0.64, and 0.75) heterostructures were studied. The …
x Ga 1-x As/N-In 0.52 Al 0.48 As (x= 0.53, 0.64, and 0.75) heterostructures were studied. The …
Sub-band energies of highly strained InGaAs-GaAs quantum wells
DAH Mace, DC Rogers, KJ Monserrat… - Semiconductor …, 1988 - iopscience.iop.org
The sub-band energies of In x Ga 1-x As quantum wells strained between GaAs barriers and
substrate are calculated using a model which takes into account strain, nonparabolicity and …
substrate are calculated using a model which takes into account strain, nonparabolicity and …
Enhanced exciton absorption and saturation limit in strained InGaAs/InP quantum wells
A new approach for enhancing the exciton absorption and increasing the saturation limit in
quantum wells (QWs), using tensile strain, is proposed. Because of the valence‐band mixing …
quantum wells (QWs), using tensile strain, is proposed. Because of the valence‐band mixing …