Essential oils as ecofriendly biopesticides? Challenges and constraints

R Pavela, G Benelli - Trends in plant science, 2016 - cell.com
Recently, a growing number of plant essential oils (EOs) have been tested against a wide
range of arthropod pests with promising results. EOs showed high effectiveness, multiple …

III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis

Y Wu, X Liu, A Pandey, P Zhou, WJ Dong… - Progress in Quantum …, 2022 - Elsevier
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

Highly uniform, self‐assembled AlGaN nanowires for self‐powered solar‐blind photodetector with fast‐response speed and high responsivity

D Wang, C Huang, X Liu, H Zhang, H Yu… - Advanced Optical …, 2021 - Wiley Online Library
Searching for power‐independent, compact, and highly environment‐sensitive
photodetectors is a critical step towards the realization of next‐generation energy‐efficient …

[HTML][HTML] III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications

C Zhao, N Alfaraj, RC Subedi, JW Liang… - Progress in Quantum …, 2018 - Elsevier
Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …

Surface-passivated AlGaN nanowires for enhanced luminescence of ultraviolet light emitting diodes

H Sun, MK Shakfa, MM Muhammed, B Janjua… - Acs …, 2017 - ACS Publications
Spontaneously grown, self-aligned AlGaN nanowire ultraviolet light emitting diodes still
suffer from low efficiency partially because of the strong surface recombination caused by …

Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices

MS Alias, M Tangi, JA Holguin-Lerma… - Journal of …, 2018 - spiedigitallibrary.org
Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …

Monolayer GaN excitonic deep ultraviolet light emitting diodes

Y Wu, X Liu, P Wang, DA Laleyan, K Sun, Y Sun… - Applied Physics …, 2020 - pubs.aip.org
We report on the molecular beam epitaxy and characterization of monolayer GaN
embedded in N-polar AlN nanowire structures. Deep ultraviolet emission from 4.85 to 5.25 …

Graded-index separate confinement heterostructure AlGaN nanowires: toward ultraviolet laser diodes implementation

H Sun, D Priante, JW Min, RC Subedi, MK Shakfa… - ACS …, 2018 - ACS Publications
High-density dislocations in materials and poor electrical conductivity of p-type AlGaN layers
constrain the performance of the ultraviolet light emitting diodes and lasers at shorter …

High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs)

B Nikoobakht, RP Hansen, Y Zong, A Agrawal… - Science …, 2020 - science.org
“Efficiency droop,” ie, a decline in brightness of light-emitting diodes (LEDs) at high electrical
currents, limits the performance of all commercial LEDs and has limited the output power of …

Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials

N Alfaraj, JW Min, CH Kang, AA Alatawi… - Journal of …, 2019 - iopscience.iop.org
Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …