Controlled localized defect paths for resistive memories are described, including a method
for forming controlled localized defect paths including forming a first electrode forming a …

7,038,935 B2 5, 2006 Rinerson et al. 7,067,862 B2 6/2006 Rinerson et al.(eV), a metal oxide
layer between the first electrode and the second electrode, the metal oxide layer Switches …

Nonvolatile memory elements that are based on resistive switching memory element layers
are provided. A nonvolatile memory element may have a resistive switching metal oxide …

Resistive-switching memory elements having improved Switching characteristics are
described, including a memory element having a first electrode and a second electrode, a …

Non-volatile resistive-switching memories are described, including a memory element
having a first electrode, a second electrode, a metal oxide between the first electrode and …

Confinement techniques for non-volatile resistive-switching memories are described,
including a memory element having a first electrode, a second electrode, a metal oxide …

The present invention relates to a transparent memory for a transparent electronic device.
The transparent memory includes: a lower transparent electrode layer that is sequen tially …

A device for manipulating a tarpaulin so as to selectively cover and uncover a top aperture of
a container. The top aperture defines an aperture peripheral edge, the aperture peripheral …

2006/025083.6 A1 11/2006 Herner et al. 2006/0250837 A1 11/2006 Herner et al. 2006,
O255392 A1 11, 2006 Cho et al. 2007/OOO8773 A1 1/2007 Scheuerlein 2007/OOO8785 A1 …

According to various embodiments, a resistive-switching memory element and memory
element array that uses a bipolar switching includes a select element comprising only a …