Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated …

T Kim, CH Choi, JS Hur, D Ha, BJ Kuh, Y Kim… - Advanced …, 2023 - Wiley Online Library
As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …

A review on the p-type transparent Cu–Cr–O delafossite materials

M Moreira, J Afonso, J Crepelliere, D Lenoble… - Journal of Materials …, 2022 - Springer
Transparent conductive oxides (TCOs) constitute a class of materials that combine high
electrical conductivity and optical transparency. These features led to the development of the …

Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

T Kim, CH Choi, P Byeon, M Lee, A Song… - npj 2D Materials and …, 2022 - nature.com
Achieving high-performance p-type semiconductors has been considered one of the most
challenging tasks for three-dimensional vertically integrated nanoelectronics. Although …

Low Carrier Effective Masses in Photoactive Sr2Sb2O2Q3 (Q = S, Se): The Role of the Lone Pair

S Al Bacha, S Saitzek, P Roussel, M Huvé… - Chemistry of …, 2023 - ACS Publications
The crystal structure, electronic properties, photocatalytic activity, and photocurrent response
of a new antimony oxysulfide Sr2Sb2O2S3 and its oxyselenide analogue Sr2Sb2O2Se3 are …

Recent progress and perspectives of field‐effect transistors based on p‐type oxide semiconductors

T Kim, JK Jeong - physica status solidi (RRL)–Rapid Research …, 2022 - Wiley Online Library
Oxide semiconductors are considered as one of the most promising candidates for back‐
end‐of‐line transistors for monolithic 3D integration due to various advantages, such as …

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

MH Cho, CH Choi, JK Jeong - Journal of the Society for …, 2022 - Wiley Online Library
This paper reviews recent developments in the fabrication of high‐performance n‐channel
metal‐oxide thin‐film transistors (TFTs) through atomic‐layer deposition (ALD), which are …

Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

AN Fioretti, M Morales-Masis - Journal of Photonics for Energy, 2020 - spiedigitallibrary.org
Transparent conductive materials (TCMs) with high p-type conductivity and broadband
transparency have remained elusive for years. Despite decades of research, no p-type …

Dilute-selenium alloying: A possible perspective for achieving p-type conductivity of β-gallium oxide

R Bai, B Zhao, K Ling, K Li, X Liu - Journal of Alloys and Compounds, 2022 - Elsevier
Photoconductive and heterojunction devices prepared based on n-type β-Ga 2 O 3 have
been extensively studied in the field of solar-blind ultraviolet (UV) detectors. However, for …

High-performance hexagonal tellurium thin-film transistor using tellurium oxide as a crystallization retarder

T Kim, CH Choi, SE Kim, JK Kim, J Jang… - IEEE Electron …, 2022 - ieeexplore.ieee.org
This study investigates the effect of oxygen plasma (PO) on the crystalline structure of
tellurium (Te) thin films during reactive sputtering. Introduction of oxygen radicals …

Study of Gallium-Doped Zinc Oxide Thin Films Processed by Atomic Layer Deposition and RF Magnetron Sputtering for Transparent Antenna Applications

P Lunca-Popa, JB Chemin, N Adjeroud, V Kovacova… - ACS …, 2023 - ACS Publications
Gallium-doped zinc oxide (GZO) films were fabricated using RF magnetron sputtering and
atomic layer deposition (ALD). The latter ones demonstrate higher electrical conductivities …