Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Nonequilibrium Green's Function Scheme
N Sano - IEEE Transactions on Electron Devices, 2024 - ieeexplore.ieee.org
A new theoretical framework for the nonequilibrium Green's function (NEGF) scheme is
presented to account for the discrete nature of impurities doped in semiconductors. Since …
presented to account for the discrete nature of impurities doped in semiconductors. Since …
Many-particle transport in the channel of quantum wire double-gate field-effect transistors with charged atomistic impurities
One of the most reported causes of variations in electron devices characteristics (coming
from the atomistic nature of matter) are discrete doping induced fluctuations. In this work we …
from the atomistic nature of matter) are discrete doping induced fluctuations. In this work we …
Remotely screened electron-impurity scattering model for nanoscale MOSFETs
The ionized impurities within the channel of nanoscale MOSFETs are shown to be strongly
remotely screened by the close proximity of the highly doped, degenerate source and drain …
remotely screened by the close proximity of the highly doped, degenerate source and drain …