High-performance rigid and flexible ultraviolet photodetectors with single-crystalline ZnGa2O4 nanowires

Z Lou, L Li, G Shen - Nano Research, 2015 - Springer
Abstract ZnGa 2 O 4 nanowires (NWs) as a ternary oxide semiconductor were successfully
synthesized by a simple vapor transport method for application as highperformance …

Gold nanoparticles supported on ZnGa2O4 nanosheets as efficient photocatalysts for selective oxidation of methane to ethane under ambient conditions

Y Chai, S Tang, Q Wang, Q Wu, J Liang, L Li - Applied Catalysis B …, 2023 - Elsevier
In this study, we fabricated photocatalysts comprising of ZnGa 2 O 4 nanosheets modified
with gold (Au) nanoparticles for the selective oxidative coupling of methane (CH 4). Our …

Preparation of ZnGa2O4 nanoflowers and their full-color luminescence properties

Y Liu, T Zheng, X Zhang, C Chen - Scientific Reports, 2023 - nature.com
Gallate material, a luminescent matrix with excellent performance is normally prepared by
vapor deposition or solid phase sintering method at high temperature. However, it has not …

Study of geometry effect on the performance of thin-film transistors fabricated with ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition for high …

S Rana, FG Tarntair, RH Horng, JP Singh - Materials Science in …, 2024 - Elsevier
Enhancement mode thin film transistors (TFTs) having different geometries were fabricated
on the Zinc gallium oxide (ZnGa 2 O 4) epilayer grown on a c-plane sapphire substrate by …

Growth and characterization of co-sputtered Al-doped ZnGa2O4 films for enhancing deep-ultraviolet photoresponse

AK Singh, PW Chen, DS Wuu - Applied Surface Science, 2021 - Elsevier
Abstract Al-doped ZnGa 2 O 4 (ZGO) films were deposited on c-plane sapphire substrates by
co-sputtering of Al and ZGO targets at a substrate temperature of 400℃ and thermally …

Characterizations of metal-oxide-semiconductor field-effect transistors of ZnGaO grown on sapphire substrate

YS Shen, WK Wang, RH Horng - IEEE Journal of the Electron …, 2017 - ieeexplore.ieee.org
Zinc gallate (ZnGaO) epilayers were grown on a c-plane sapphire substrate by metal-
organic chemical vapor deposition and fabricated into metal-oxide-semiconductor field …

A study for the influences of temperatures on ZnGa2O4 films and solar-blind sensing performances

C Lu, Q Zhang, S Li, Z Yan, Z Liu, P Li… - Journal of Physics D …, 2021 - iopscience.iop.org
In this work, ZnGa 2 O 4 metal–semiconductor–metal solar-blind ultraviolet (UV)
photodetectors were fabricated and discussed by using the radio-frequency (rf) magnetron …

The effect of oxygen partial pressure and annealing process on the characteristics of ZnGa2O4 MSM UV photodetector

WL Huang, CH Li, SP Chang… - ECS Journal of Solid …, 2019 - iopscience.iop.org
In this work, ZnGa 2 O 4 solar-blind photodetectors (PD) based on a metal-semiconductor-
metal (MSM) structure was fabricated by radio frequency (RF) magnetron sputtering method …

Controlled Epitaxial Growth of Vertically Well-Aligned ZnGa2O4 Nanowire Arrays on Sapphire via a Novel Vapor–Liquid–Solid Process

L Wang, P Li, K Li, DF Xue, K Peng, Z Zhang… - Crystal Growth & …, 2024 - ACS Publications
As a representative ternary oxide semiconductor, the epitaxial growth of uniaxially aligned
ZnGa2O4 nanowire arrays on common substrates remains challenging, owing to their lattice …

Epitaxial growth of bottom-crosslinked ZnGa2O4 nanowire arrays on c-plane GaN/Al2O3 substrate

P Li, L Wang, C Liu, C Lee, S Sun, Z Zhang… - Journal of Alloys and …, 2024 - Elsevier
The epitaxial growth of highly ordered ZnGa 2 O 4 nanowire arrays and the construction of
connectivity states between the individually segregated nanowires would significantly …