Binary group III-nitride based heterostructures: band offsets and transport properties
In the last few years, there has been remarkable progress in the development of group III-
nitride based materials because of their potential application in fabricating various …
nitride based materials because of their potential application in fabricating various …
Temperature-dependent electrical characteristics of Ni/Au vertical Schottky barrier diodes on β-Ga2O3 epilayers
Temperature dependent current transport mechanism in Ni/β-Ga 2 O 3 Schottky Barrier
Diodes was studied using current-voltage (IV) and capacitance-voltage (CV) …
Diodes was studied using current-voltage (IV) and capacitance-voltage (CV) …
Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD
Growing a thick high-quality epitaxial layer on the β-Ga 2 O 3 substrate is crucial in
commercializing β-Ga 2 O 3 devices. Metal organic chemical vapor deposition (MOCVD) is …
commercializing β-Ga 2 O 3 devices. Metal organic chemical vapor deposition (MOCVD) is …
[HTML][HTML] Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes
This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode
characteristics by the introduction of a layer of HfO 2 (5 nm) between the metal and …
characteristics by the introduction of a layer of HfO 2 (5 nm) between the metal and …
Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes
Micro-structural investigation of Ni/GaN Schottky barrier diodes has been carried out using
high-resolution transmission electron microscopy and electron diffraction spectrum in order …
high-resolution transmission electron microscopy and electron diffraction spectrum in order …
Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation
Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes
prepared by ultra high vacuum evaporation has been done. Analysis has been made to …
prepared by ultra high vacuum evaporation has been done. Analysis has been made to …
Study of TaN-gated p-GaN E-mode HEMT
R Baby, K Reshma, H Chandrasekar… - … on Electron Devices, 2023 - ieeexplore.ieee.org
We report on the study of tantalum nitride (TaN) gate-stack on p-GaN-based e-mode high
electron mobility transistor (HEMT) on silicon. Besides offering an excellent etch selectivity …
electron mobility transistor (HEMT) on silicon. Besides offering an excellent etch selectivity …
Schottky barrier inhomogeneity in (Pd/Au) Al0. 22 Ga0. 78N/GaN/SiC HEMT: Triple Gaussian distributions
The temperature dependence of electrical properties of (Au/Pd)/Al 0.22 Ga 0.78 N/GaN
Schottky barrier diodes (SBDs) have been deeply analyzed by means of forward Igs (Vgs) …
Schottky barrier diodes (SBDs) have been deeply analyzed by means of forward Igs (Vgs) …
Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures
The main electrical characteristics of Cu/n-Si metal-semiconductor structures have been
investigated in the temperature range 50 K to 310 K using current–voltage (I–V) and …
investigated in the temperature range 50 K to 310 K using current–voltage (I–V) and …
Electrical transport characteristics of Ni/Pd/n-GaN Schottky barrier diodes as a function of temperature
The electrical transport properties of Ni/Pd/n-GaN Schottky barrier diodes (SBDs) have been
investigated in the wide temperature range of 100–425K. An abnormal decrease in the …
investigated in the wide temperature range of 100–425K. An abnormal decrease in the …