Abstract Strain balanced InAs/GaSb type-II superlattice structures have been grown using
molecular beam epitaxy. InSb like interfaces have been introduced at both InAs on GaSb …

Рассмотрены основные свойства композиционных сверхрешеток II типа (T2SL).
Приведено описание различных типов гетеропереходв, энергетических условий их …

Abstract The interfaces of InAs/GaSb superlattices (SLs) were studied with the goal of
improving interband cascade infrared photodetectors (ICIPs) designed for the long …

The electronic structures of InAs/GaSb superlattices (SLs) are calculated in the framework of
eight-band effective-mass theory, including the interface (IF) potential. With two adjustable …

Abstract For type II InAs/GaSb superlattice (SL) structure, we reveal that, if the overall strain
of the SLs is balanced to be zero, there exists a quantitative relationship between the …

本文系统报道了基于InAs/GaSb Ⅱ 类超晶格(T2SLs) 的长波红外探测器的研究进展. 从衬底,
材料生长以及器件性能角度对比分析了基于GaSb, InAs 衬底的各种器件结构的优缺点 …

Herein, we report a type II InAs/GaSb superlattice structure (SLS) grown on GaSb (1 0 0)
substrates by molecular beam epitaxy (MBE) and its electrical characterization for mid …

One of the major challenges of antimonide-based devices arises owing to the large number
of surface states generated during fabrication processes. Surface passivation and …

InAs/GaSb superlattice (SL) structures were fabricated on GaSb substrates by metalorganic
vapor phase epitaxy (MOVPE) toward midwavelength infrared (MWIR) photodiodes. Almost …

One of the major challenges faced by antimonide-based devices is a result of the large
number of surface states that are generated. Surface passivation and subsequent capping of …