Structural Stability and Electronic and Optical Properties of Bulk WS2 from First-Principles Investigations
S Chen, Y Pan, D Wang, H Deng - Journal of Electronic Materials, 2020 - Springer
Tungsten disulfide (WS 2) has attracted great attention for use in optoelectronics due to its
suitable bandgap and adjustable properties. However, the structure and photoelectric …
suitable bandgap and adjustable properties. However, the structure and photoelectric …
An advanced Bragg diffraction imaging technique to characterize defects: The examples of GaN and AlN
TNT Caliste, L Kirste, J Baruchel - Microelectronic Engineering, 2023 - Elsevier
An advanced X-ray Bragg diffraction imaging technique known as Rocking Curve Imaging
(RCI) was implemented and developed at the European Synchrotron Radiation Facility …
(RCI) was implemented and developed at the European Synchrotron Radiation Facility …
Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations
Silicon carbide as a wide bandgap semiconductor is of great research interest for its
widespread deployment in a range of electronic and optoelectronic devices, particularly in …
widespread deployment in a range of electronic and optoelectronic devices, particularly in …
Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals
T Ailihumaer, H Peng, F Fujie… - Materials Science and …, 2021 - Elsevier
A more sophisticated simulation model is developed based on the principle of ray-tracing to
simulate the grazing-incidence synchrotron X-ray topographic contrast of dislocations lying …
simulate the grazing-incidence synchrotron X-ray topographic contrast of dislocations lying …
Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy
Abstract Six-inch AlInP/GaAs epitaxial wafers grown by organometallic vapor-phase epitaxy
(OMVPE) are being developed for light-emitting diodes (LEDs). The surface morphology of …
(OMVPE) are being developed for light-emitting diodes (LEDs). The surface morphology of …
Investigation of Defect Behavior and Lattice Strain in PVT-Grown 4H Silicon Carbide Bulk Crystals
T Ailihumaer - 2021 - search.proquest.com
In recent years, the demand for high power electronic devices fabricated from silicon carbide
(SiC) has been increasing rapidly due to its superior material advantages such as excellent …
(SiC) has been increasing rapidly due to its superior material advantages such as excellent …
Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor Phase Epitaxy
Hongyu Peng a, Tuerxun Ailihumaer a, Yafei Liu a, Balaji Raghothamachar a and Michael
Dudley aa Department of Materials Science and Chemical Engineering, Stony Brook …
Dudley aa Department of Materials Science and Chemical Engineering, Stony Brook …