Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

In semiconductor heteroepitaxy the growing film frequently undergoes a series of strain relief
mechanisms that may include surface reconstruction, step bunching, faceting, and finally …

Quantum Dot Heterostructures Dieter Bimberg, Marius Grundmann and Nikolai N.
Ledentsov Institute of Solid State Physics, Technische Universität Berlin, Germany Quantum …

Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …

This review seeks to extend the scope of both the experimental and theoreticalwork carried
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …

This introductory chapter provides a brief survey on the development of epitaxial growth
techniques and points out tasks for the epitaxy of device structures. Starting from early …

III–V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB)
crystal structure, and pure crystal phase wires represent the exception rather than the rule. In …

Topological qubits based on Majorana Fermions have the potential to revolutionize the
emerging field of quantum computing by making information processing significantly more …

Nanoparticle shape can be a factor responsible for their chemical, optical and electronic
properties. For instance, nanodiamond morphology has been found to affect its phase …

When growing a crystal, a planar front is desired for most of the applications. This plane
shape is often destroyed by instabilities of various types. In the case of growth from a …