Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

A Di Bartolomeo - Physics Reports, 2016 - Elsevier
In the past decade graphene has been one of the most studied materials for several unique
and excellent properties. Due to its two dimensional nature, physical and chemical …

Graphene-related nanomaterials: tuning properties by functionalization

Q Tang, Z Zhou, Z Chen - Nanoscale, 2013 - pubs.rsc.org
In this review, we discuss the most recent progress on graphene-related nanomaterials,
including doped graphene and derived graphene nanoribbons, graphene oxide, graphane …

Origin of doping in quasi-free-standing graphene on silicon carbide

J Ristein, S Mammadov, T Seyller - Physical review letters, 2012 - APS
We explain the robust p-type doping observed for quasi-free-standing graphene on
hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism …

The quasi-free-standing nature of graphene on H-saturated SiC (0001)

F Speck, J Jobst, F Fromm, M Ostler… - Applied Physics …, 2011 - pubs.aip.org
We report on an investigation of quasi-free-standing graphene on 6H-SiC (0001) which was
prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption …

Water on graphene: review of recent progress

C Melios, CE Giusca, V Panchal, O Kazakova - 2D Materials, 2018 - iopscience.iop.org
The sensitivity of graphene to the surrounding environment is given by its π electrons, which
are directly exposed to molecules in the ambient air. The high sensitivity of graphene to the …

Epitaxial graphene transistors: enhancing performance via hydrogen intercalation

JA Robinson, M Hollander, M LaBella III… - Nano …, 2011 - ACS Publications
We directly demonstrate the importance of buffer elimination at the graphene/SiC (0001)
interface for high frequency applications. Upon successful buffer elimination, carrier mobility …

Anomalously strong pinning of the filling factor in epitaxial graphene

T Janssen, A Tzalenchuk, R Yakimova, S Kubatkin… - Physical Review B …, 2011 - APS
We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-
terminated SiC. Uniquely to this system, the dominance of quantum over classical …

Uniform doping of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants

H He, KH Kim, A Danilov, D Montemurro, L Yu… - Nature …, 2018 - nature.com
Tuning the charge carrier density of two-dimensional (2D) materials by incorporating
dopants into the crystal lattice is a challenging task. An attractive alternative is the surface …

[PDF][PDF] Non-volatile photochemical gating of an epitaxial graphene/polymer heterostructure

S Lara-Avila, K Moth-Poulsen, R Yakimova… - Advanced materials, 2011 - clara.nz
Graphene, a single layer of carbon atoms, is steadily making inroads into the applications
that presently rely on semiconductor heterostructures.[1] Recent advances include high …

Localized charge carriers in graphene nanodevices

D Bischoff, A Varlet, P Simonet, M Eich… - Applied Physics …, 2015 - pubs.aip.org
Graphene—two-dimensional carbon—is a material with unique mechanical, optical,
chemical, and electronic properties. Its use in a wide range of applications was therefore …