The excellent properties of III–V semiconductors make them intriguing candidates for next-
generation electronics and optoelectronics. Their nanowire (NW) counterparts further …

This article summarizes some of the critical features of pure indium antimonide nanowires
(InSb NWs) growth and their potential applications in the industry. In the first section …

The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has
been systematically investigated. InAs NWs were grown by molecular beam epitaxy with and …

The control of optical and transport properties of semiconductor heterostructures is crucial
for engineering new nanoscale photonic and electrical devices with diverse functions. Core …

For the first time, we report a complete control of crystal structure in InAs1–x Sb x NWs by
tuning the antimony (Sb) composition. This claim is substantiated by high-resolution …

We report on the first demonstration of InAs1–x Sb x nanowires grown by catalyst-free
selective-area metal–organic chemical vapor deposition (SA-MOCVD). Antimony …

The monolithic integration of InAs1–x Sb x semiconductor nanowires on graphitic substrates
holds enormous promise for cost-effective, high-performance, and flexible devices in …

We present a study on the growth of InAs 1− x Sb x alloy nanowires directly on Si (111)
substrates via a self-seeded mechanism for the first time. Through varying group V flow rate …

III–V ternary nanowires are interesting due to the possibility of modulating their physical and
material properties by tuning their material composition. Amongst them InAs 1− x Sb x …

In this paper, we present a review about recent progress on the growth of III-V
semiconductor homo-and heterostructured nanowires. We will first deliver a general …