Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
The authors have studied and compared the initial growth and properties of AlN films
deposited on Si (111) by thermal and plasma-enhanced atomic layer deposition (ALD) using …
deposited on Si (111) by thermal and plasma-enhanced atomic layer deposition (ALD) using …
Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
AP Perros, H Hakola, T Sajavaara… - Journal of Physics D …, 2013 - iopscience.iop.org
Impurities in aluminum nitride films prepared by plasma enhanced atomic layer deposition
using NH 3-, N 2/H 2-and N 2-based plasmas are investigated by combining time-of-flight …
using NH 3-, N 2/H 2-and N 2-based plasmas are investigated by combining time-of-flight …
Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface …
The impact of in situ plasma-enhanced atomic layer deposition passivation on the electrical
properties of HfO 2/In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOSCAPs) …
properties of HfO 2/In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOSCAPs) …
Nitrogen-Passivated (010) In0.53Ga0.47As FinFETs With High Peak gm and Reduced Leakage Current
In this article, InGaAs FinFETs using (010) orientation channel and nitrogen post remote
plasma (RP) treatment have been fabricated. This device exhibits a peak transconductance …
plasma (RP) treatment have been fabricated. This device exhibits a peak transconductance …
Highly textured (100)-oriented AlN thin films using thermal atomic layer deposition and their electrical properties
Aluminum nitride (AlN) thin films are deposited on p-type silicon wafers using atomic layer
deposition (ALD) techniques. Tris (dimethylamido) aluminum (TDMAA) and ammonia (NH 3) …
deposition (ALD) techniques. Tris (dimethylamido) aluminum (TDMAA) and ammonia (NH 3) …
Growth of aluminum nitride thin films by Atomic Layer Deposition and their applications: A review
Aluminum nitride (AlN) has versatile and intriguing properties, such as wide direct bandgap,
high thermal conductivity, good thermal and chemical stability, and various functionalities …
high thermal conductivity, good thermal and chemical stability, and various functionalities …
Electrical characteristics of atomic layer deposited AlN on n-InP
Atomic layer deposited AlN films on n-InP were electrically characterized. Compared to the
sample without AlN, the interface state density obtained from the capacitance–voltage (C–V) …
sample without AlN, the interface state density obtained from the capacitance–voltage (C–V) …
Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
Abstract Properties and passivation effect of ultra-thin AlN films fabricated on InGaAs/GaAs
near-surface quantum wells by plasma-enhanced atomic layer deposition are investigated …
near-surface quantum wells by plasma-enhanced atomic layer deposition are investigated …
Effect of atomic layer deposited AlN layer on Pt/4H-SiC Schottky diodes
Thin AlN layer was deposited on n-type 4H-SiC using atomic layer deposition and the
electrical properties of Pt/SiC Schottky diodes with and without AlN layer were comparatively …
electrical properties of Pt/SiC Schottky diodes with and without AlN layer were comparatively …
[PDF][PDF] Plasma enhanced atomic layer deposition passivated HfO2/AlN/In0. 53Ga0. 47As MOSCAPs with sub-nm equivalent oxide thickness and low interface trap …
Abstract—Impact of in situ PEALD passivation on the electrical properties of HfO2/In0.
53Ga0. 47As MOSCAPs has been studied. Excellent interface quality of high-k/III-V is …
53Ga0. 47As MOSCAPs has been studied. Excellent interface quality of high-k/III-V is …