If the medium surrounding a nano‐grain does not support the vibrational wavenumbers of a
material, the optical and acoustic phonons get confined within the grain of the …

The series of Pb9. 6Sb0. 2Te10-x Se x compounds with different Se content (x) were
prepared, and their structure was investigated at the atomic and nanosized regime level …

There is considerable current interest in the physics of nanostructured materials in view of
their numerous technological applications [1, 2] in a variety of areas such as catalysis [3] …

The lead chalcogenides semiconductor materials show in the bulk a shift of the electronic
band gap with temperature that is opposite to the majority of direct or indirect band gap …

We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and
AlN layers and c-oriented wurtzite GaN, AlN, and Al x Ga 1− x N (x< 0.3) layers were grown …

Publisher Summary This chapter discusses low-dimensional structures of II–VI diluted
magnetic semiconductors (DMS) with manganese and describes the carrier concentration …

Reflectance loss of p-polarized infrared light at longitudinal optical (LO) phonon energies
has been reported by Berreman. The origin of this loss has been discussed in view of the …

For single-crystal epitaxial lead telluride films, Raman spectra obtained under conditions in
which the intensity of incident radiation is minimized in order to suppress photo-initiated …

The interaction of a semiconductor surface or interface and p-polarized infrared (IR) light has
been investigated from the viewpoint of terahertz (THz) application. In this study the electric …

Short-period PbTe/Pb 1− x Sn x Te/CaTe (x= 0.36, 0.48) superlattices were prepared on a
KCl (100) substrate and their interband optical absorption was measured. The superlattice …