Accelerated lifetime tests (ALTs) play a critical role in long-term reliability studies of SiC
MOSFETs, including lifetime estimation, failure analysis, and condition monitoring. This …

SiC MOSFETs (silicon carbide metal‐oxide semiconductor field‐effect transistors) are
replacing Si insulated gate bipolar transistors in many power conversion applications due to …

To clarify the current research situation and offer a better understanding of the reliability for
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …

Abstract Relatively recently, SiC power MOSFETs have transitioned from being a research
exercise to becoming an industrial reality. The potential benefits that can be drawn from this …

In this article, the repetitive avalanche ruggedness of silicon carbide metal–oxide–
semiconductor field-effect transistors (MOSFETs) with asymmetric trench (AT) and double …

In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-
oxide-semiconductor field-effect transistors under repetitive avalanche shocks are …

This paper investigates the failure mechanism of SiC power MOSFETs during avalanche
breakdown under unclamped inductive switching (UIS) test regime. Switches deployed …

The avalanche ruggedness of power devices becomes a crucial issue to ensure the safe
operation of the power conversion systems, particularly under the extreme temperature …

This article presents the impact of repetitive shortcircuit (SC) tests on the normal operation of
a commercial silicon carbide (SiC) MOSFET and the influence of different case temperatures …

This paper presents an in-depth investigation into the avalanche breakdown robustness of
commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional …