Blue-shift mechanisms in annealed quantum wells
Using a wide range of annealing conditions and a combination of optical and structural
characterizations, we have been able to discriminate the different mechanisms at the origin …
characterizations, we have been able to discriminate the different mechanisms at the origin …
Optical properties of GaNAs and GaInAsN quantum wells
RJ Potter, N Balkan - Journal of Physics: Condensed Matter, 2004 - iopscience.iop.org
We present an overview of our optical characterization work on dilute nitride quantum well
(QW) samples. A simple model for calculating interband transition energies is constructed …
(QW) samples. A simple model for calculating interband transition energies is constructed …
S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides
We have investigated the temperature dependence of the band gap energy in GaInNAs,
GaNAs and InGaAs quantum wells. In the structures containing nitrogen the well-known S …
GaNAs and InGaAs quantum wells. In the structures containing nitrogen the well-known S …
Electron spin dynamics in GaAsN and InGaAsN structures
We report on optical orientation experiments in undoped GaAsN epilayers and InGaAsN
quantum wells (QW), showing that a strong electron spin polarisation can persist at room …
quantum wells (QW), showing that a strong electron spin polarisation can persist at room …
Temperature dependence of photoluminescence and photoreflectance spectra of dilute GaAsN alloys
The temperature dependence of photoluminescence (PL) and photoreflectance (PR) spectra
of Ga As 1− x N x unrelaxed layers (0⩽ x< 0.05) grown on GaAs (100) substrates is studied …
of Ga As 1− x N x unrelaxed layers (0⩽ x< 0.05) grown on GaAs (100) substrates is studied …
Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: Determination of the band offsets for and quantum wells
M Galluppi, L Geelhaar, H Riechert, M Hetterich… - Physical Review B …, 2005 - APS
We present an extensive study leading to a general understanding about the optical
transitions involved in the surface photovoltage (SPV) spectra of type-I quantum well (QW) …
transitions involved in the surface photovoltage (SPV) spectra of type-I quantum well (QW) …
Nitrogen-plasma study for plasma-assisted MBE growth of 1.3 μm laser diodes
We have studied the influence of radio-frequency plasma cell operating conditions on the
plasma-assisted molecular-beam epitaxy growth of bulk GaAsN and GaInAsN quantum …
plasma-assisted molecular-beam epitaxy growth of bulk GaAsN and GaInAsN quantum …
Band structure calculations for dilute nitride quantum wells under compressive or tensile strain
We have calculated the band structure of InGaAsN/GaAs (N)/GaAs compressively strained
quantum wells (QW) emitting at 1.3 µm using the band anticrossing model and an eight …
quantum wells (QW) emitting at 1.3 µm using the band anticrossing model and an eight …
Comparison of the optical gain of InGaAsN quantum-well lasers with GaAs or GaAsP barriers
We have compared the calculated band structure and optical gain of compressively strained
InGaAsN quantum-well lasers emitting at 1.3 μ m with GaAs or GaAsP barriers. The GaAsP …
InGaAsN quantum-well lasers emitting at 1.3 μ m with GaAs or GaAsP barriers. The GaAsP …
Influence of indium on the electronic states in GaInNAs/GaAs quantum well structures
M Hetterich, A Grau, AY Egorov… - Journal of applied physics, 2003 - pubs.aip.org
We use room-temperature photoreflectance spectroscopy to investigate the influence of
indium on the electronic structure of Ga1xInxNyAs1y/GaAs multiple quantum wells. To fit our …
indium on the electronic structure of Ga1xInxNyAs1y/GaAs multiple quantum wells. To fit our …