From ferroelectric material optimization to neuromorphic devices
Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …
achieved polarization state, ferroelectric materials have a unique potential for low power …
Halide perovskites: a new era of solution‐processed electronics
Organic–inorganic mixed halide perovskites have emerged as an excellent class of
materials with a unique combination of optoelectronic properties, suitable for a plethora of …
materials with a unique combination of optoelectronic properties, suitable for a plethora of …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses
In an increasingly data-rich world the need for developing computing systems that cannot
only process, but ideally also interpret big data is becoming continuously more pressing …
only process, but ideally also interpret big data is becoming continuously more pressing …
Emerging memories: resistive switching mechanisms and current status
The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …
attention for its application in non-volatile memory (NVM) devices, popularly described as …
Electrochemical metallization memories—fundamentals, applications, prospects
This review focuses on electrochemical metallization memory cells (ECM), highlighting their
advantages as the next generation memories. In a brief introduction, the basic switching …
advantages as the next generation memories. In a brief introduction, the basic switching …
Nonvolatile memory materials for neuromorphic intelligent machines
Recent progress in deep learning extends the capability of artificial intelligence to various
practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis …
practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis …
[HTML][HTML] Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios
X Liu, J Zheng, D Wang, P Musavigharavi… - Applied Physics …, 2021 - pubs.aip.org
In this Letter, we report a back-end-of-line (BEOL), complementary metal–oxide–
semiconductor (CMOS)-compatible Al 0.64 Sc 0.36 N-based ferroelectric diode that shows …
semiconductor (CMOS)-compatible Al 0.64 Sc 0.36 N-based ferroelectric diode that shows …
Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories
J Jiang, ZL Bai, ZH Chen, L He, DW Zhang… - Nature materials, 2018 - nature.com
Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-
destructive electrical read-out of the polarization states in ferroelectric memories. Still, the …
destructive electrical read-out of the polarization states in ferroelectric memories. Still, the …