Review on interface engineering of low leakage current and on-resistance for high-efficiency Ga2O3-based power devices
Abstract Beta-Gallium oxide (β-Ga 2 O 3) has emerged as a very feasible semiconductor
material for new explorations, thanks to its advantages of ultra-wide bandgap and diverse …
material for new explorations, thanks to its advantages of ultra-wide bandgap and diverse …
High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2
In this letter, fin-shape tri-gate-Ga2O3 lateral MESFETs are demonstrated with a high power
figure of merit (PFOM) of 0.95 GW/cm2–a record high for any-Ga2O3 transistor to date. A low …
figure of merit (PFOM) of 0.95 GW/cm2–a record high for any-Ga2O3 transistor to date. A low …
Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode
Here, we propose a p-type copper aluminum oxide (p-CuAlO 2) interlayer for the high
breakdown and low leakage current of β-Ga 2 O 3 Schottky barrier diodes (SBDs). The XPS …
breakdown and low leakage current of β-Ga 2 O 3 Schottky barrier diodes (SBDs). The XPS …
Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs
Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga2O3) offer
the potential to achieve higher switching performance and efficiency and lower …
the potential to achieve higher switching performance and efficiency and lower …
[HTML][HTML] Device engineering of p-CuAlO2/β-Ga2O3 interface: a staggered-gap band-alignment
CV Prasad, M Labed, MTAS Shaikh, JY Min… - Materials Today …, 2023 - Elsevier
In this work, by controlling the oxygen flow rate (OFR)(from 0% to 30%), we suggest using a
p-type copper aluminum oxide (p-CuAlO 2) interlayer to enhance the high breakdown and …
p-type copper aluminum oxide (p-CuAlO 2) interlayer to enhance the high breakdown and …
Interfacial Properties of the SnO/κ-Ga2O3 pn Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3
P Rajabi Kalvani, A Parisini, G Sozzi… - … Applied Materials & …, 2023 - ACS Publications
The interfacial properties of a planar SnO/κ-Ga2O3 p–n heterojunction have been
investigated by capacitance–voltage (C–V) measurements following a methodological …
investigated by capacitance–voltage (C–V) measurements following a methodological …
Microstructure Evolution and Electrical Behaviors for High-Performance Cu2O/Zr-Doped β-Ga2O3 Heterojunction Diodes
J Jiang, S Wu, P Liu, Y Tian - ACS Applied Materials & Interfaces, 2024 - ACS Publications
Beta-gallium oxide (β-Ga2O3) is emerging as a promising ultrawide band gap (UWBG)
semiconductor, which is vital for high-power, high-frequency electronics and deep-UV …
semiconductor, which is vital for high-power, high-frequency electronics and deep-UV …
[HTML][HTML] Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing
In this work, we analyze the optimum annealing conditions for the activation of Ge-implanted
β-Ga 2 O 3 in order to reach low ohmic contact resistances. The experiments involved the …
β-Ga 2 O 3 in order to reach low ohmic contact resistances. The experiments involved the …
Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm− 1
In this work, we report on the realization of vertical (100) β-Ga 2 O 3 FinFET devices for the
use in power electronics applications. The experiments are carried out on structures …
use in power electronics applications. The experiments are carried out on structures …
Special topic on Wide-and ultrawide-bandgap electronic semiconductor devices
J Würfl, T Palacios, HG Xing, Y Hao… - Applied Physics …, 2024 - pubs.aip.org
Despite the tremendous progress on wide-bandgap materials in the last few decades,
devices made of these materials are still far from their maximum theoretical performance …
devices made of these materials are still far from their maximum theoretical performance …