High-density memory devices are essential to sustain growth in information technology (IT).
Furthermore, brain-inspired computing devices are the future of IT businesses such as …

Controlled resistive switching behavior has shown potential for brain-inspired functionalities
and feasibility for multi-functional photelectric sensors. For the first time, bias-polarity …

The electronic structure and optical properties of SiO x N y: H films enriched with silicon
obtained by plasma-enhanced chemical deposition are studied. It is shown, that with the …

One of the promising nonvolatile memories of the next generation is resistive random-
access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile …

This study investigates the temperature-independent switching characteristics of magnesium
fluoride (MgFx) based bipolar resistive memory devices at temperatures ranging from 300 K …

This report explores the influence of temperature on resistive switching characteristics in the
AlN/Ni–Mn–In magnetoelectric (ME) heterostructure-based resistive random access memory …

This work presents a study on the electrical properties of plant materials, which is a
fascinating area of research. These materials show promising potential in mitigating the …

The effects of electrode materials (top and bottom) and the operating ambiances (open-air
and vacuum) on the MgFx-based resistive random-access memory (RRAM) devices are …

As the building block of brain-inspired computing, resistive switching memory devices have
recently attracted great interest due to their biological function to mimic synapses and …

This study investigates the switching characteristics of the silicon oxynitride (SiOxNy)-based
bipolar resistive random-access memory (RRAM) devices at different operating ambiances …