Harnessing the Metal–Insulator Transition of VO2 in Neuromorphic Computing

P Schofield, A Bradicich, RM Gurrola… - Advanced …, 2023 - Wiley Online Library
Future‐generation neuromorphic computing seeks to overcome the limitations of von
Neumann architectures by colocating logic and memory functions, thereby emulating the …

Nanoelectronics Using Metal–Insulator Transition

YJ Lee, Y Kim, H Gim, K Hong, HW Jang - Advanced Materials, 2024 - Wiley Online Library
Metal–insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive
change in Mott insulators has attracted tremendous interest for investigation into next …

Spatiotemporal characterization of the field-induced insulator-to-metal transition

J Del Valle, NM Vargas, R Rocco, P Salev, Y Kalcheim… - Science, 2021 - science.org
Many correlated systems feature an insulator-to-metal transition that can be triggered by an
electric field. Although it is known that metallization takes place through filament formation …

Energy-efficient Mott activation neuron for full-hardware implementation of neural networks

S Oh, Y Shi, J Del Valle, P Salev, Y Lu, Z Huang… - Nature …, 2021 - nature.com
To circumvent the von Neumann bottleneck, substantial progress has been made towards in-
memory computing with synaptic devices. However, compact nanodevices implementing …

Vanadium dioxide for thermochromic smart windows in ambient conditions

N Shen, S Chen, R Huang, J Huang, J Li, R Shi… - Materials Today …, 2021 - Elsevier
Smart windows have attracted increasing attentions in recent decades because of their
ability to automatically regulate indoor solar irradiation, reduce the energy consumption of …

Ultrafast reprogrammable multifunctional vanadium-dioxide-assisted metasurface for dynamic THz wavefront engineering

J Shabanpour, S Beyraghi, A Cheldavi - Scientific reports, 2020 - nature.com
In this paper, for the first time, a new generation of ultrafast reprogrammable multi-mission
bias encoded metasurface is proposed for dynamic terahertz wavefront engineering by …

Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO2/TiO2 Devices

D Li, AA Sharma, DK Gala, N Shukla… - … applied materials & …, 2016 - ACS Publications
DC and pulse voltage-induced metal–insulator transition (MIT) in epitaxial VO2 two terminal
devices were measured at various stage temperatures. The power needed to switch the …

Programmable anisotropic digital metasurface for independent manipulation of dual-polarized THz waves based on a voltage-controlled phase transition of VO 2 …

J Shabanpour - Journal of Materials Chemistry C, 2020 - pubs.rsc.org
Programmable metasurfaces incorporated with tunable materials controlled by external
stimuli can provide an unprecedented degree of freedom in dynamical wave manipulation in …

Generation of tunable stochastic sequences using the insulator–metal transition

J Valle, P Salev, S Gariglio, Y Kalcheim, IK Schuller… - Nano Letters, 2022 - ACS Publications
Probabilistic computing is a paradigm in which data are not represented by stable bits, but
rather by the probability of a metastable bit to be in a particular state. The development of …

Spontaneous current constriction in threshold switching devices

JM Goodwill, G Ramer, D Li, BD Hoskins… - Nature …, 2019 - nature.com
Threshold switching devices are of increasing importance for a number of applications
including solid-state memories and neuromorphic circuits. Their non-linear characteristics …